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DODAJ/IZMIJENI OPERATORE PRETRAŽIVANJA
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1.Koričić, Marko; Žilak, Josip; Suligoj, TomislavInvestigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms // Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
New Brunswick (NJ), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2016. str. 25-28 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
2.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichiSemiconductor device and fabrication method thereof
(2015) -
3.Koričić, Marko; Žilak, Josip; Suligoj, TomislavDouble-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost // IEEE electron device letters, 36 (2015), 2; 90-92 doi:10.1109/LED.2014.2385107 (međunarodna recenzija, članak, znanstveni)
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4.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device Comprising a Lateral Bipolar Transistor
(2014) -
5.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiHybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
(2014) -
6.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichiSemiconductor device and fabrication method thereof
(2014) -
7.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device Comprising a Lateral Bipolar Transistor
(2014) -
8.Poljak, Mirko; Wang, Minsheng; Žonja, Sanja; Đerek, Vedran; Ivanda, Mile; Wang, Kang L.; Suligoj, TomislavImpact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Rijeka: GRAFIK, 2014. str. 33-38 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
9.Ivanić, Vedran; Poljak, Mirko; Suligoj, TomislavPhonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Rijeka: GRAFIK, 2014. str. 45-50 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
10.Krivec, Sabina; Prgić, Hrvoje; Poljak, Mirko; Suligoj, TomislavComparison of RF performance between 20 nm-gate bulk and SOI FinFET // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Rijeka: GRAFIK, 2014. str. 51-56 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
11.Poljak, Mirko; Wang, Kang L.; Suligoj, TomislavSensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons // Proceedings of the International Conference on Ultimate Integration on Silicon (ULIS) 2014 / Mikael Ostling ; Per-Erik Hellstrom ; Gunnar Malm (ur.).
Stockholm: KTH, 2014. str. 1-4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
12.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device and Method for Manufacturing Semiconductor Device
(2013) -
13.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiHybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
(2013) -
14.Suligoj, Tomislav; Koričić, Marko; Žilak, Josip; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaOptimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer // Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting
Bordeaux, Francuska: Institute of Electrical and Electronics Engineers (IEEE), 2013. str. 13-16 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
15.Poljak, MirkoMORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates, 2013. (podatak o recenziji nije dostupan, računalni programski paket).
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16.Poljak, MirkoCarrier transport in low-dimensional nanoelectronic devices, 2013., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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17.Poljak, Mirko; Suligoj, Tomislav; Wang, Kang L.Influence of substrate type and quality on carrier mobility in graphene nanoribbons // Journal of applied physics, 114 (2013), 5; 053701-1 doi:10.1063/1.4817077 (međunarodna recenzija, članak, znanstveni)
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18.Poljak, Mirko; Wang, Minsheng; Song, Emil B.; Suligoj, Tomislav; Wang, Kang L.Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons // Solid-state electronics, 84 (2013), 6; 103-111 doi:10.1016/j.sse.2013.02.014 (međunarodna recenzija, članak, znanstveni)
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19.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device and Method for Manufacturing Semiconductor Device
(2012) -
20.Koričić Marko; Suligoj Tomislav; Mochizuki Hidenori; Morita SoichiSemiconductor device and method for manufacturing semiconductor device
(2012) -
21.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaExamination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region // Proceedings of the 2012 Bipolar/BiCMOS Circuits and Technology Meeting
Portland (OR), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2012. str. 5-8 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
22.Poljak, MirkoQUDEN - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons, 2012. (podatak o recenziji nije dostupan, računalni programski paket).
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23.Koričić, Marko; Suligoj, Tomislav; Morita, So-ichi; Mochizuki, Hidenori; Shinomura, Katsumi; Imai, HisayaDouble-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 59 (2012), 12; 3647-3650 doi:10.1109/TED.2012.2216881 (međunarodna recenzija, članak, znanstveni)
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24.Poljak, Mirko; Song, Emil B.; Wang, Minsheng; Suligoj, Tomislav; Wang, Kang L.Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons // Proceedings of the 42nd European Solid-State Device Research Conference (ESSDERC) / Deval, Yann ; Zimmer, Thomas ; Skotnicki, Thomas (ur.).
Bordeaux: Institute of Electrical and Electronics Engineers (IEEE), 2012. str. 298-301 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
25.Poljak, Mirko; Song, Emil B.; Wang, Minsheng; Suligoj, Tomislav; Wang, Kang L.Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons // IEEE transactions on electron devices, 59 (2012), 12; 3231-3238 doi:10.1109/TED.2012.2217969 (međunarodna recenzija, članak, znanstveni)
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26.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Biljanović, PetarOn the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
27.Žilak, Josip; Koričić, Marko; Suligoj, TomislavImpact of Bipolar Transistor Parameters on the Characteristics of the Double-Balanced Mixer // MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics / Biljanović, Petar (ur.).
Rijeka: Croatian Society MIPRO, 2012. str. 97-102 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
28.Knežević, Tihomir; Suligoj, Tomislav; Šakić, Agata; Nanver, Lis K.Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions // MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings / Biljanović, Petar (ur.).
Rijeka: Croatian Society MIPRO, 2012. str. 42-47 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
29.Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, TomislavAssessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling // IEEE transactions on electron devices, 59 (2012), 6; 1636-1643 doi:10.1109/TED.2012.2189217 (međunarodna recenzija, članak, znanstveni)
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30.Poljak, MirkoINGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors, 2011. (podatak o recenziji nije dostupan, računalni programski paket).
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31.Grgec, DaliborKVANTNOMEHANIČKO MODELIRANJE U MONTE CARLO SIMULACIJAMA MOS STRUKTURA, 2011., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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32.Čović, MajaANALIZA P-I-N FOTODIODA VELIKIH BRZINA RADA I OSJETLJIVOSTI, 2011., diplomski rad, preddiplomski, Fakultet elektrotehnike i računarstva, Zagreb
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33.Khan, Saeed AhmedELECTRICAL PROPERTIES OF FABRICATED TRANSISTOR REGIONS IN ADVANCED SILICON BIPOLAR TECHNOLOGIES, 2011., diplomski rad, diplomski, Fakultet elektrotehnike i računarstva, Zagreb
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34.Lončarić, IvanProjektiranje integriranih radio-frekvencijskih sklopova u tehnologiji bipolarnog tranzistora s horizontalnim tokom struje, 2011., diplomski rad, diplomski, Fakultet elektrotehnike i računarstva, Zagreb
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35.Petričević, MarijanAnaliza brzine rada i prinosa procesiranih sklopova emiterski vezane logike u tehnologiji bipolarnog tranzistora s horizontalnim tokom struje, 2011., diplomski rad, diplomski, Fakultet elektrotehnike i računarstva, Zagreb
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36.Šakić, Agata; Nanver, Lis K.; Scholtes Tom L.M.; Heerkensa, Carel Th.H.; Knežević, Tihomir; Van Veen, Gerard; Kooijman, Kees; Vogelsang, PatrickBoron-layer silicon photodiodes for high-efficiency low-energy electron detection // Solid-state electronics, 65/66 (2011), 38-44 doi:10.1016/j.sse.2011.06.042 (međunarodna recenzija, članak, znanstveni)
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37.Knežević, Tihomir; Suligoj, Tomislav; Šakić, Agata; Nanver, Lis K.Optimization of the perimeter doping of ultrashallow p+-n--n- photodiodes // MIPRO 2011 - 34th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Croatian Society MIPRO, 2011. str. 44-48 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
38.Shi, L.; Nanver, Lis K.; Šakić, Agata; Nihtianov, Stoyan N.; Knežević, Tihomir; Gottwald, Alexander; Kroth, UdoSeries Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes // IEEE Instrumentation and Measurement Technology Conference
Binjiang: Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 1-4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
39.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaImpact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology // Proceedings of MIPRO 2011, Vol.1. MEET&GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2011. str. 61-65 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
40.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, PetarTanki slojevi fosforom visokodopiranog polikristalnog silicija s mogućom primjenom na području termoelektrika // Knjiga sažetaka 7. znanstvenog sastanaka HFD-a
Primošten, Hrvatska, 2011. (poster, sažetak, znanstveni) -
41.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, PetarHeavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics // NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment
Hvar, Hrvatska, 2011. (poster, sažetak, znanstveni) -
42.Koričić, Marko; Suligoj, TomislavBVCEO Engineering in SOI LBT Structure with Top Contacted Base // Informacije MIDEM Journal of Microelectronics, Electronic Components and Materials, 41 (2011), 2; 77-85 (međunarodna recenzija, članak, znanstveni)
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43.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaExamination of Novel High-voltage Double-emitter Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2011 Bipolar/BiCMOS Circuits and Technology Meeting
Atlanta (GA), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 5-8 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
44.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavFeatures of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
45.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavInvestigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
46.Biasotto, Cleber; Gonda, Viktor; Nanver, Lis K.; Scholtes, Tom L.M.; van der Cingel, Johan; Vidal, Daniel; Jovanović, VladimirLow-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions // Journal of electronic materials, 40 (2011), 11; 2187-2196 doi:10.1007/s11664-011-1734-6 (međunarodna recenzija, članak, znanstveni)
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47.Žonja, Sanja; Ivanda, Mile; Očko, Miroslav; Suligoj, Tomislav; Koričić, Marko; Biljanović, PetarStructural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films // Proceedings of 34th International Convention MIPRO 2011 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Denona, 2011. str. 55-60 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
48.Hrauda, Nina; Zhang, Jianjun; Wintersberger, Eugen; Etzelstorfer, Tanja; Mandl, Bernhard; Stangl, Julian; Carbone, Dina; Holý, Vaclav; Jovanović, Vladimir; Biasotto, Cleber et al.X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor // Nano letters, 11 (2011), 7; 2875-2880 doi:10.1021/nl2013289 (međunarodna recenzija, članak, znanstveni)
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49.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavPhysics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: DENONA, 2011. str. 71-76 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
50.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavModeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Solid-state electronics, 65/66 (2011), 130-138 doi:10.1016/j.sse.2011.06.039 (međunarodna recenzija, članak, znanstveni)
