Pronađeno 133 radova, za izraz:
"PROJEKT: (Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (MZO-ZP-036-0982904-1642))"
DODAJ/IZMIJENI OPERATORE PRETRAŽIVANJA
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51.Nanver, Lis K.; Biasotto, Cleber; Jovanović, Vladimir; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Bauer, Guenther; Schmidt, Oliver G.; Miglio, Leo; Kosina, Hans et al.SiGe dots as stressor material for strained Si devices // 5th International SiGe Technology and Device Meeting
Stockholm, Švedska, 2010. (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
52.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavPhysical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana: BIRO M, 2010. str. 101-105 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
53.Šakić, Agata; Jovanović, Vladimir; Maleki, Parastoo; Scholtes, Tom L.M.; Milosavljević, Silvana; Nanver, Lis K.Characterization of amorphous boron layers as diffusion barrier for pure aluminium // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 26-29 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
54.Hrauda, Nina; Etzelstorfer, Tanja; Strangl, Julian; Carbone, Dina; Bauer, Guenther; Biasotto, Cleber; Jovanović, Vladimir; Nanver, Lis; Moers, Juergen; Gruetzmacher, DetlevField-effect Transistor Devices Based on Strained Si Channels Above Buried 2D Periodic SiGe Quantum Dots // Material Research Society 2010 Spring Meeting
San Francisco (CA), Sjedinjene Američke Države, 2010. (poster, međunarodna recenzija, sažetak, znanstveni) -
55.Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K; Moers, Juergen; Gruetzmacher, Detlev; Gerharz Julian; Mussler, Gregor; van der Cingel, Johan; Zhang Jianjun; Bauer, Guenther et al.n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility // IEEE electron device letters, 31 (2010), 10; 1083-1085 doi:10.1109/LED.2010.2058995 (međunarodna recenzija, članak, znanstveni)
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56.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavModeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
57.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaDesign considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology // Solid-state electronics, 54 (2010), 10; 1166-1172 doi:10.1016/j.sse.2010.05.008 (međunarodna recenzija, članak, znanstveni)
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58.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaHorizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs // IEEE electron device letters, 31 (2010), 6; 534-536 (međunarodna recenzija, članak, znanstveni)
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59.Očko, Miroslav; Žonja, Sanja; Ivanda, MileThermoelectric materials: problems and perspectives // Proceedings of 33rd International Convention MIPRO 2010 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2010. str. 42-47 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
60.Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.Ultra-high aspect-ratio FinFET technology // Solid-state electronics, 54 (2010), 9; 870-876 doi:10.1016/j.sse.2010.04.021 (međunarodna recenzija, članak, znanstveni)
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61.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavQuantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 74-79 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
62.Hrabar, Silvio; Krois, Igor; Kiricenko, Aleksandar; Bonic, IvanHomogenization of Active Transmission-line-based ENZ Metamaterials // Proceedings on IEEE APS 2010 Symposium / Ed (ur.).
Toronto: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 170-173 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
63.Hrabar, Silvio; Krois, Igor; Kiricenko, Aleksandar; Bonic, IvanNon-Foster Active Transmission Line with Nearly Dispersionless ENZ Behavior // META 10 2nd Interantional Conference on Metamaterials, Photonic Crystals and Plasmonics, abstract book / Zouhdi, Said (ur.).
Pariz: University of Paris, 2010. str. 33-33 (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
64.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavOrientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Glasgow, 2010. str. 21-24 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
65.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavAnalysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 54 (2010), 5; 545-551 doi::10.1016/j.sse.2010.01.009 (međunarodna recenzija, članak, znanstveni)
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66.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavSuppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs // Microelectronic Engineering, 87 (2010), 2; 192-199 doi:10.1016/j.mee.2009.07.013 (međunarodna recenzija, članak, znanstveni)
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67.Koričić, Marko; Suligoj, Tomislav; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD): Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 1-2 (predavanje, međunarodna recenzija, sažetak, znanstveni) -
68.Nanver, Lis K; Jovanović, Vladimir; Biasotto, Cleber; van der Cingel, Johan; Milosavljević, SilvanaApplication of Laser Annealing in the EU FP6 Project D-DotFET // Proceedings of 17th International Conference on Advanced Thermal Processing of Semiconductors, RTP '09
Albany (NY), Sjedinjene Američke Države, 2009. str. 1-7 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
69.Očko, Miroslav; Zadro, Krešo; Drobac Djuro; Bermanec, Vladimir; Aviani, Ivica; Žonja, Sanja; Mixson, Dainiel; Bauer, Eric D; Sarrao, John LMagnetska svojstva CexLa1−xPt Kondo feromagneta // Knjiga sažetaka 6. znanstvenog sastanka Hrvatskog fizikalnog društva
Zagreb, 2009. str. 145-145 (poster, sažetak, znanstveni) -
70.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, PeterProučavanje visoko dopiranih slojeva LPVCD polikristalnog silicija // Knjiga sažetaka 6. znanstvenog sastanka Hrvatskog fizikalnog društva
Zagreb, 2009. str. 132-132 (poster, sažetak, znanstveni) -
71.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavOptimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD): Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 1-2 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
72.Hrabar, Silvio; Krois, Igor; Matvijev, MarijanIs it Possible to Overcome Basic Dispersion Constraints and Achieve Broadband Cloaking? // Proceedings on THE THIRD INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS / Tretyakov, Sergei (ur.).
London : Delhi: Publications and Web Office for the School of Electronic Engineering and Computer Science, 2009. str. 408-410 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
73.Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.Horizontal Current Bipolar Transistor (HCBT) for the Low-cost BiCMOS Technology // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
Atena: Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 359-362 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
74.Jovanović, Vladimir; Nanver, Lis K.; Suligoj, Tomislav; Poljak, MirkoBulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
Atena: Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 241-244 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
75.Jovanović, Vladimir; Poljak, Mirko; Suligoj, TomislavFinFET Considerations for 0.18 um Technology // Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009 / Topič M. ; Krč, J. ; Šorli, I. (ur.).
Ljubljana: MIDEM Society for Microelectronics, Electronic Components and Materials, 2009. str. 91-96 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
