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DODAJ/IZMIJENI OPERATORE PRETRAŽIVANJA
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1.Koričić, Marko; Žilak, Josip; Osrečki, Željko; Suligoj, TomislavAnalysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates // Proceedings of the 41st International Convention MIPRO 2018
Opatija, Hrvatska, 2018. str. 66-71 doi:10.23919/MIPRO.2018.8400013 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
2.Koričić, Marko; Žilak, Josip; Suligoj, TomislavImpact of the Local p-well Substrate Parameters on the Electrical Performance of the Double- Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor // Proceedings of the 40th International Convention MIPRO 2017 / Biljanović, Petar (ur.).
Rijeka, 2017. str. 91-95 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
3.Koričić, Marko; Žilak Josip; Suligoj, TomislavA High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 64 (2017), 7; 3019-3022 doi:10.1109/TED.2017.2702189 (međunarodna recenzija, članak, znanstveni)
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4.Koričić, Marko; Žilak, Josip; Suligoj, TomislavInvestigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms // Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
New Brunswick (NJ), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2016. str. 25-28 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
5.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichiSemiconductor device and fabrication method thereof
(2015) -
6.Koričić, Marko; Žilak, Josip; Suligoj, TomislavImpact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.).
Rijeka: GRAFIK, 2015. str. 31-36 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
7.Koričić, Marko; Žilak, Josip; Suligoj, TomislavDouble-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost // IEEE electron device letters, 36 (2015), 2; 90-92 doi:10.1109/LED.2014.2385107 (međunarodna recenzija, članak, znanstveni)
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8.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device Comprising a Lateral Bipolar Transistor
(2014) -
9.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiHybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
(2014) -
10.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichiSemiconductor device and fabrication method thereof
(2014) -
11.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device Comprising a Lateral Bipolar Transistor
(2014) -
12.Očko, Miroslav; Žonja, Sanja; Ivanda, MileGrain growth from amorphous phase // AIP advances, 4 (2014), 037125-1 doi:10.1063/1.4870242 (međunarodna recenzija, članak, znanstveni)
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13.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device and Method for Manufacturing Semiconductor Device
(2013) -
14.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiHybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same
(2013) -
15.Žonja, SanjaAnaliza strukture, elektronskih i transportnih svojstava visokodopiranih polikristalnih silicijskih tankih filmova, 2013., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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16.Suligoj, Tomislav; Koričić, Marko; Žilak, Josip; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaOptimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer // Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting
Bordeaux, Francuska: Institute of Electrical and Electronics Engineers (IEEE), 2013. str. 13-16 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
17.Očko, Miroslav; Žonja, Sanja; Ivanda, MileSome physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films // Proceedings of MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013 / Biljanović, Petar ; Skala, Karolj (ed) (ur.).
Opatija, 2013. str. 27-32 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
18.Očko, Miroslav; Žonja, Sanja; Salamon, Krešimir; Ivanda, Mile; Yu, Lei; Newman, NathanInvestigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure // Journal of applied physics, 114 (2013), 043707-1 doi:10.1063/1.4816340 (međunarodna recenzija, članak, znanstveni)
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19.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichiSemiconductor Device and Method for Manufacturing Semiconductor Device
(2012) -
20.Koričić Marko; Suligoj Tomislav; Mochizuki Hidenori; Morita SoichiSemiconductor device and method for manufacturing semiconductor device
(2012) -
21.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaExamination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region // Proceedings of the 2012 Bipolar/BiCMOS Circuits and Technology Meeting
Portland (OR), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2012. str. 5-8 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
22.Koričić, Marko; Suligoj, Tomislav; Morita, So-ichi; Mochizuki, Hidenori; Shinomura, Katsumi; Imai, HisayaDouble-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 59 (2012), 12; 3647-3650 doi:10.1109/TED.2012.2216881 (međunarodna recenzija, članak, znanstveni)
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23.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Biljanović, PetarOn the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
24.Očko, Miroslav; Žonja, Sanja; Ivanda, MileRole of the substrate and the temperature of deposition on the properties of the TaxN thin films // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
25.Očko, Miroslav; Samardžija, Zoran; Žonja, Sanja; Aviani, IvicaStructural and electronic properties of the highly concentrated UxY1-xRu2Si2 alloy system // Journal of alloys and compounds, 512 (2012), 1; 79-84 doi:10.1016/j.jallcom.2011.09.022 (međunarodna recenzija, članak, znanstveni)
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26.Grgec, DaliborKVANTNOMEHANIČKO MODELIRANJE U MONTE CARLO SIMULACIJAMA MOS STRUKTURA, 2011., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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27.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaImpact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology // Proceedings of MIPRO 2011, Vol.1. MEET&GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2011. str. 61-65 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
28.Stubičar, Mirko; Stubičar, Nada; Milinović, Andrijana; Krumes, Dragomir; Ivanda, Mile; Žonja, Sanja; Očko, MiroslavSynthesis and Characterization of some Clathrate Compounds // Knjiga sažetaka 7. znanstvenog sastanaka HFD-a
Primošten, Hrvatska, 2011. (poster, sažetak, znanstveni) -
29.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, PetarTanki slojevi fosforom visokodopiranog polikristalnog silicija s mogućom primjenom na području termoelektrika // Knjiga sažetaka 7. znanstvenog sastanaka HFD-a
Primošten, Hrvatska, 2011. (poster, sažetak, znanstveni) -
30.Očko, Miroslav; Žonja, Sanja; Ivanda, MileSilicon goes thermoelectric // NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment
Hvar, Hrvatska, 2011. (poster, sažetak, znanstveni) -
31.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, PetarHeavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics // NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment
Hvar, Hrvatska, 2011. (poster, sažetak, znanstveni) -
32.Koričić, Marko; Suligoj, TomislavBVCEO Engineering in SOI LBT Structure with Top Contacted Base // Informacije MIDEM Journal of Microelectronics, Electronic Components and Materials, 41 (2011), 2; 77-85 (međunarodna recenzija, članak, znanstveni)
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33.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaExamination of Novel High-voltage Double-emitter Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2011 Bipolar/BiCMOS Circuits and Technology Meeting
Atlanta (GA), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 5-8 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
34.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavFeatures of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
35.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavInvestigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
36.Biasotto, Cleber; Gonda, Viktor; Nanver, Lis K.; Scholtes, Tom L.M.; van der Cingel, Johan; Vidal, Daniel; Jovanović, VladimirLow-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions // Journal of electronic materials, 40 (2011), 11; 2187-2196 doi:10.1007/s11664-011-1734-6 (međunarodna recenzija, članak, znanstveni)
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37.Žonja, Sanja; Ivanda, Mile; Očko, Miroslav; Suligoj, Tomislav; Koričić, Marko; Biljanović, PetarStructural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films // Proceedings of 34th International Convention MIPRO 2011 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Denona, 2011. str. 55-60 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
38.Hrauda, Nina; Zhang, Jianjun; Wintersberger, Eugen; Etzelstorfer, Tanja; Mandl, Bernhard; Stangl, Julian; Carbone, Dina; Holý, Vaclav; Jovanović, Vladimir; Biasotto, Cleber et al.X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor // Nano letters, 11 (2011), 7; 2875-2880 doi:10.1021/nl2013289 (međunarodna recenzija, članak, znanstveni)
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39.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavPhysics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: DENONA, 2011. str. 71-76 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
40.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavModeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Solid-state electronics, 65/66 (2011), 130-138 doi:10.1016/j.sse.2011.06.039 (međunarodna recenzija, članak, znanstveni)
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41.Nanver, Lis K.; Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G. et al.Integration of MOSFETs with SiGe dots as stressor material // Solid-state electronics, 60 (2011), 1; 75-83 doi:10.1016/j.sse.2011.01.038 (međunarodna recenzija, članak, znanstveni)
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42.Očko, Miroslav; Žonja, Sanja; Aviani, Ivica; Bauer, Eric D.; Sarrao, John L.Transport properties of the YbAl3 compound: On the energy scales of YbAl3 from thermopower data // Journal of alloys and compounds, 509 (2011), 25; 6999-7003 doi:10.1016/j.jallcom.2011.04.057 (međunarodna recenzija, članak, znanstveni)
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43.Očko, Miroslav; Žonja, Sanja; Ivanda, MileReport on the recent investigations of the systems which assume some of the good thermoelectric properties // ARW Workshop on new materials for thermoelectric applications: Theory and experiment
Hvar, Hrvatska, 2010. (poster, sažetak, znanstveni) -
44.Očko, Miroslav; Žonja, Sanja; Ivanda, MileThermoelectric devices and solar energy // Brijuni, Conference on Sustainable Energy Sources
Brijuni, Hrvatska, 2010. (poster, sažetak, znanstveni) -
45.Očko, Miroslav; Žonja, Sanja; Nelson G.L.; Freericks, J.K.; Yu, Lei; Newman, N.Low temperature transport properties of TaxN thin films (0.72≤ x ≤ 0.83) // Journal of physics. D, Applied physics, 43 (2010), 44; 445405-1 doi:10.1088/0022-3727/43/44/445405 (međunarodna recenzija, članak, znanstveni)
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46.Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Grützmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G.; Miglio, Leo et al.N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility // Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010
Veldhoven, Nizozemska, 2010. str. 101-104 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
47.Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K.; Moers, Juergen; Grützmacher, Detlev; Gerharz, Julian; Mussler, Gregor; van der Cingel, Johan; Zhang, Jianjun; Bauer, Guenther et al.MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility // Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long (ur.).
Šangaj, Kina, 2010. str. 926-928 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
48.Šakić, Agata; Civale, Yann; Nanver, Lis K.; Biasotto, Cleber; Jovanović, VladimirAl-mediated Solid-Phase Epitaxy of Silicon-On- Insulator // Materials Research Society Symposium Proceedings, Volume 1245 / Wang, Qi ; Yan, Baojie ; Flewitt, Andrew ; Tsai, Chuang-Chuang ; Higashi, Seiichiro (ur.).
Warrendale (PA): Materials Research Society, 2010. str. 427-432 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
49.Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav2-D front- and back-gate potential distribution model of submicrometer VFD SONFET // Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 69-73 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
50.Mavrek, Elena; Lončarić, Ivan; Poljak, Ivan; Koričić, Marko; Suligoj, TomislavEffect of parasitic RLC parameters in bias networks on ECL delay time // Proceedings of the 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 99-103 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
51.Nanver, Lis K.; Biasotto, Cleber; Jovanović, Vladimir; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Bauer, Guenther; Schmidt, Oliver G.; Miglio, Leo; Kosina, Hans et al.SiGe dots as stressor material for strained Si devices // 5th International SiGe Technology and Device Meeting
Stockholm, Švedska, 2010. (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
52.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavPhysical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana: BIRO M, 2010. str. 101-105 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
53.Šakić, Agata; Jovanović, Vladimir; Maleki, Parastoo; Scholtes, Tom L.M.; Milosavljević, Silvana; Nanver, Lis K.Characterization of amorphous boron layers as diffusion barrier for pure aluminium // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 26-29 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
54.Hrauda, Nina; Etzelstorfer, Tanja; Strangl, Julian; Carbone, Dina; Bauer, Guenther; Biasotto, Cleber; Jovanović, Vladimir; Nanver, Lis; Moers, Juergen; Gruetzmacher, DetlevField-effect Transistor Devices Based on Strained Si Channels Above Buried 2D Periodic SiGe Quantum Dots // Material Research Society 2010 Spring Meeting
San Francisco (CA), Sjedinjene Američke Države, 2010. (poster, međunarodna recenzija, sažetak, znanstveni) -
55.Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K; Moers, Juergen; Gruetzmacher, Detlev; Gerharz Julian; Mussler, Gregor; van der Cingel, Johan; Zhang Jianjun; Bauer, Guenther et al.n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility // IEEE electron device letters, 31 (2010), 10; 1083-1085 doi:10.1109/LED.2010.2058995 (međunarodna recenzija, članak, znanstveni)
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56.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavModeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
57.Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaDesign considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology // Solid-state electronics, 54 (2010), 10; 1166-1172 doi:10.1016/j.sse.2010.05.008 (međunarodna recenzija, članak, znanstveni)
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58.Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, HisayaHorizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs // IEEE electron device letters, 31 (2010), 6; 534-536 (međunarodna recenzija, članak, znanstveni)
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59.Očko, Miroslav; Žonja, Sanja; Ivanda, MileThermoelectric materials: problems and perspectives // Proceedings of 33rd International Convention MIPRO 2010 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2010. str. 42-47 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
60.Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.Ultra-high aspect-ratio FinFET technology // Solid-state electronics, 54 (2010), 9; 870-876 doi:10.1016/j.sse.2010.04.021 (međunarodna recenzija, članak, znanstveni)
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61.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavQuantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 74-79 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
62.Hrabar, Silvio; Krois, Igor; Kiricenko, Aleksandar; Bonic, IvanHomogenization of Active Transmission-line-based ENZ Metamaterials // Proceedings on IEEE APS 2010 Symposium / Ed (ur.).
Toronto: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 170-173 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
63.Hrabar, Silvio; Krois, Igor; Kiricenko, Aleksandar; Bonic, IvanNon-Foster Active Transmission Line with Nearly Dispersionless ENZ Behavior // META 10 2nd Interantional Conference on Metamaterials, Photonic Crystals and Plasmonics, abstract book / Zouhdi, Said (ur.).
Pariz: University of Paris, 2010. str. 33-33 (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
64.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavOrientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Glasgow, 2010. str. 21-24 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
65.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavAnalysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 54 (2010), 5; 545-551 doi::10.1016/j.sse.2010.01.009 (međunarodna recenzija, članak, znanstveni)
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66.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavSuppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs // Microelectronic Engineering, 87 (2010), 2; 192-199 doi:10.1016/j.mee.2009.07.013 (međunarodna recenzija, članak, znanstveni)
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67.Koričić, Marko; Suligoj, Tomislav; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD): Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 1-2 (predavanje, međunarodna recenzija, sažetak, znanstveni) -
68.Nanver, Lis K; Jovanović, Vladimir; Biasotto, Cleber; van der Cingel, Johan; Milosavljević, SilvanaApplication of Laser Annealing in the EU FP6 Project D-DotFET // Proceedings of 17th International Conference on Advanced Thermal Processing of Semiconductors, RTP '09
Albany (NY), Sjedinjene Američke Države, 2009. str. 1-7 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
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72.Hrabar, Silvio; Krois, Igor; Matvijev, MarijanIs it Possible to Overcome Basic Dispersion Constraints and Achieve Broadband Cloaking? // Proceedings on THE THIRD INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS / Tretyakov, Sergei (ur.).
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73.Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.Horizontal Current Bipolar Transistor (HCBT) for the Low-cost BiCMOS Technology // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
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74.Jovanović, Vladimir; Nanver, Lis K.; Suligoj, Tomislav; Poljak, MirkoBulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
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75.Jovanović, Vladimir; Poljak, Mirko; Suligoj, TomislavFinFET Considerations for 0.18 um Technology // Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009 / Topič M. ; Krč, J. ; Šorli, I. (ur.).
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76.Biasotto, Cleber; Gonda, Viktor; Nanver, Lis K.; van der Cingel, Johan; Jovanović, VladimirLaser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation // Electrochemical Society Transactions / De Lima Monteiro, D. ; Bonnaud, O. ; Morimoto, N. (ur.).
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77.Hrauda, Nina; Zhang, Jianjun; Stangl, J.; Rehman-Khan, A.; Bauer, Guenther; Stoffel, Mathieu; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility // Journal of Vacuum Science and Technology B - Microelectronics and Nanometer Structures Processing, Measurement and Phenomena, 27 (2009), 2; 912-918 doi:10.1116/1.3056178 (međunarodna recenzija, članak, znanstveni)
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78.Hrauda, Nina; Zhang, Jianjun; Stoffel, Mathieu; Stangl, J.; Bauer, Guenther; Rehman-Khan, A.; Holy, V.; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.X-ray diffraction study of the composition and strain fields in buried SiGe islands // The European physical journal. Special topics, 167 (2009), 1; 41-46 doi:10.1140/epjst/e2009-00934-7 (međunarodna recenzija, članak, znanstveni)
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79.Jovanović, Vladimir; Poljak, Mirko; Suligoj, Tomislav; Civale, Yann; Nanver, Lis K.1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs // Device Research Conference - Conference Digest / Koester, S. ; Gundlach, D. ; Fay, P. (ur.).
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80.Lučev, Željka; Krois, Igor; Cifrek, Mario; Džapo, Hrvoje; Tonković, StankoEffects of Transmitter Position and Receiver Ground Plane on Signal Transmission in Intrabody Wireless EMG Measurement System // Proceedings of the 11th World Congress on Medical Physics and Biomedical Engineering, vol. 25/7 / Dossel and Schlegel (ur.).
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81.Lučev, Željka; Krois, Igor; Cifrek, MarioA multichannel wireless EMG measurement system based on intrabody communication // XIX IMEKO World Congress, Fundamental and Applied Metrology / Girao, Pedro S. (ur.).
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83.Biasotto, Cleber; Jovanović, Vladimir; Gonda, Viktor; van der Cingel, Johan; Milosavljević, Silvana; Nanver, Lis K.Integration of Laser-Annealed Junctions in a Low- Temperature High-k Metal-Gate MISFET // Proceedings of the 10th International Conference on ULtimate Integration of Silicon / Mantl, S. ; Lemme, M. ; Schubert, J. ; Albrecht, W. (ur.).
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85.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavQuantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
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86.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavCompact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
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87.Žonja, Sanja; Ivanda, Mile; Očko, M.; Biljanović, Petar; Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
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88.Vilman, Viktor; Ristić, Davor; Ivanda, Mile; Biljanović, Petar; Gamulin, Ozren; Furić, Krešimir; Ristić, Mira; Musić, SvetozarLow pressure chemical vapor deposition of thin SiOx films in oxygen and nitrogen atmospheres // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
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89.Armellini, C.; Bhaktha, S.N.B.; Beclin, F.; Berneschi, S.; Biljanović, Petar; Bouazaoui, M.; Boulard, B.; Capoen, B.; Chiappini, A.; Chiasera, A. et al.Rare-earth-activated nano-structures fabricated by sol-gel route // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
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90.Očko, Miroslav; Žonja, Sanja; Stubičar, Mirko; Stubičar, Nada; Bauer, Eric D.; Sarrao, John L.Why YbxLu1-xAl3 and YbxY1-xInCu4 have quite opposite concentration dependence of the Vickers microhardness? // Solid State Communications, 149 (2009), 33-34; 1313-1316 doi:10.1016/j.ssc.2009.05.037 (međunarodna recenzija, članak, znanstveni)
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91.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavAnalytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 53 (2009), 5; 540-547 doi:10.1016/j.sse.2009.03.002 (međunarodna recenzija, članak, znanstveni)
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92.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavImproving bulk FinFET DC performance in comparison to SOI FinFET // Microelectronic engineering, 86 (2009), 10; 2078-2085 doi:10.1016/j.mee.2009.01.066 (međunarodna recenzija, članak, znanstveni)
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93.Koričić, MarkoHorizontal Current Bipolar Transistor Structures for Integration with CMOS Technology, 2008., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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94.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavVertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model // Solid-State Electronics, 52 (2008), 10; 1505-1511 doi:10.1016/j.sse.2008.06.013 (međunarodna recenzija, članak, znanstveni)
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95.Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, PetarThermoelectric properties of the LPCVD obtained Si:B thin films // ARW Workshop on Properties and Applications of Thermoelectric Materials and Conference on Concepts in Electron Correlation
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96.Očko, Miroslav; Žonja, Sanja; Yu, LeiTransport Properties of the TaxN thin films // ARW Workshop on Properties and Applications of Thermoelectric Materials & Conference on Concepts in Electron Correlation
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97.Očko, Miroslav; Žonja, Sanja; Bauer, Eric D.; Sarrao, John L.On the energy scales of YbAl3 from the thermopower data: the role of coherence on thermopower // ARW Workshop on Properties and Applications of Thermoelectric Materials and Conference on Concepts in Electron Correlation
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98.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavVertical Silicon-on-Nothing FET: Subthreshold Slope Calculation Using Compact Capacitance Model // Informacije MIDEM Journal of Microelectronics, Electronic Components and Materials, 38 (2008), 1; 1-4 (međunarodna recenzija, članak, znanstveni)
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99.Hrabar, Silvio; Krois, Igor; Ivšić, Branimir; Zaluški, Davor; Pavlaković, GoranActive Dispersionless ‘ Plasmonic’ Metamaterial - a Step Towards Broadband Cloaking // Proceedings of the 2008 IEEE AP-S International Symposium and USNC/URSI National Radio Science Meeting
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