Pregled po projektu: Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (MB: HRZZ-IP-2018-01-5296)
Pronađeno 32 radova
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26.Knežević, Tihomir; Elsayed, Ahmed; Dick, Jan F.; Liu, Xingyu; Schulze, Joerg; Suligoj, Tomislav; Nanver, Lis K.Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C // Proceedings of the ESSDERC 49th European Solid- State Device Research Conference
Kraków, Poljska: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
27.Krakers, Max; Knezevic, T.; Nanver, L. K.Reverse breakdown and light-emission patterns studied in Si PureB SPADs // 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 30-35 doi:10.23919/mipro.2019.8757007 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
28.Knezevic, Tihomir; Nanver, Lis K.; Suligoj, TomislavMinimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment // Proceedings of SPIE - The International Society for Optical Engineering
San Francisco (CA): SPIE, 2019. 109120Y, 8 doi:10.1117/12.2508829 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
29.Knežević, Tihomir; Liu, Xingyu; Hardeveld, Erwin; Suligoj, Tomislav; Nanver, Lis K.Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes // IEEE electron device letters, 40 (2019), 6; 858-861 doi:10.1109/led.2019.2910465 (međunarodna recenzija, članak, znanstveni)
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30.Knezevic, Tihomir; Suligoj, Tomislav; Nanver, Lis K.Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers // International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 24-29 doi:10.23919/mipro.2019.8757156 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
31.Osrečki, Ž.; Žilak, J.; Koričić, M.; Suligoj, T.Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology // 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 70-75 doi:10.23919/mipro.2019.8756724 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
32.Žilak, Josip; Koričić, Marko; Osrečki, Željko; Šimić, Marko; Suligoj, TomislavNoise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
San Diego (CA), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 186-189 doi:10.1109/BCICTS.2018.8551146 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
