Pregled po CROSBI profilu: Tomislav Brodar (CROSBI Profil: 34823, MBZ: 368185, ORCID: 0000-0002-6459-0260)
Pronađeno 19 radova
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1.Structural and electrical characterization of pure and Al-doped ZnO nanorods // Materials, 14 (2021), 23; 7454, 12 doi:10.3390/ma14237454 (međunarodna recenzija, članak, znanstveni)
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2.Influence of Al doping on morphology and electrical properties of ZnO nanorods // 3rd International Congress on Photonics Research INTERPHOTONICS 2021 : Book of abstracts / Kayahan, Esrin ; Oral, Ahmed Yavuz ; Kol, Seda ; Aksan, Onur Alp ; Özbey, Sayit (ur.).
Muğla, 2021. 11, 11 (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
3.M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies // Journal of applied physics, 130 (2021), 12; 125703, 10 doi:10.1063/5.0064958 (međunarodna recenzija, članak, znanstveni)
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4.M center in 4H-SiC is a carbon self-interstitial // Physical review. B., 103 (2021), 180102, 4 doi:10.1103/PhysRevB.103.L180102 (međunarodna recenzija, pismo, znanstveni)
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5.Response of 4H-SiC Detectors to Ionizing Particles // Crystals, 11 (2021), 1; 10, 13 doi:10.3390/cryst11010010 (međunarodna recenzija, članak, znanstveni)
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6.E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor // ANIMMA 2019 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications / Lyoussi, A. ; Giot, M. ; Carette, M. ; Jenčič, I. ; Reynard-Carette, C. ; Vermeeren, L. ; Snoj, L. ; Le Dû, P. (ur.).
Portorož, Slovenija: EDP Sciences, 2020. 07007, 6 doi:10.1051/epjconf/202022507007 (radionica, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
7.Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478 (2020), 224-228 doi:10.1016/j.nimb.2020.07.005 (međunarodna recenzija, članak, znanstveni)
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8.Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation // Crystals, 10 (2020), 9; 845, 16 doi:10.3390/cryst10090845 (međunarodna recenzija, članak, znanstveni)
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9.Silicon carbide diodes for neutron detection // Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 986 (2020), 164793, 55 doi:10.1016/j.nima.2020.164793 (međunarodna recenzija, pregledni rad, znanstveni)
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10.One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water // Materials, 13 (2020), 7; 1621, 14 doi:10.3390/ma13071621 (međunarodna recenzija, članak, znanstveni)
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11.Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes // Crystals, 9 (2019), 7; 328, 7 doi:10.3390/cryst9070328 (međunarodna recenzija, članak, znanstveni)
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12.Deep Level Defects in 4H-SiC Epitaxial Layers // ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials
Washington D.C., Sjedinjene Američke Države: Trans Tech Publications, Ltd., 2018. str. 225-228 doi:10.4028/www.scientific.net/msf.924.225 (ostalo, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
13.E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor // NENE 2018 - The 27th International Conference Nuclear Energy for New Europe
Portorož, Slovenija, 2018. 702, 1 (radionica, podatak o recenziji nije dostupan, sažetak, znanstveni) -
14.Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling // Journal of applied physics, 124 (2018), 24; 245701, 10 doi:10.1063/1.5063773 (međunarodna recenzija, članak, znanstveni)
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15.Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 437 (2018), 1; 27-31 doi:10.1016/j.nimb.2018.10.030 (međunarodna recenzija, članak, znanstveni)
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16.Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study // Journal of applied physics, 123 (2018), 16; 161597, 37 doi:10.1063/1.5011124 (međunarodna recenzija, članak, znanstveni)
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17.Električki aktivni defekti u 4H-SiC uvedeni zračenjem, 2017., diplomski rad, diplomski, Prirodoslovno matematički fakultet, Zagreb
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18.Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime // Journal of physics. Condensed matter, 29 (2017), 47; 475701, 6 doi:10.1088/1361-648X/aa908c (međunarodna recenzija, članak, znanstveni)
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19.Usporedba transportnih svojstava Si i 4H-SiC detektora // 24th International Scientific Meeting on Vacuum Science and Technique, Book of abstracts / Buljan, Maja ; Karlušić, Marko (ur.).
Zagreb: Hrvatsko Vakuumsko Društvo (HVD), 2017. str. 20-20 (poster, sažetak, znanstveni)
