Pregled po CROSBI profilu: Tihomir Knežević (CROSBI Profil: 30771, MBZ: 328552)
Pronađeno 45 radova
-
1.Knežević, Tihomir; Hadžipašić, Amira; Ohshima, Takeshi; Makino, Takahiro; Capan, IvanaM-center in low-energy electron irradiated 4H-SiC // Applied Physics Letters, 120 (2022), 25; 252101, 4 doi:10.1063/5.0095827 (međunarodna recenzija, članak, znanstveni)
-
2.Marković, Lovro; Knežević, Tihomir; Nanver, Lis. K.; Suligoj, TomislavModeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
Opatija, Hrvatska, 2021. str. 64-69 doi:10.23919/MIPRO52101.2021.9597002 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
3.Shivakumar, D. Thammaiah; Knežević, Tihomir; Nanver, Lis K.Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si // Journal of Materials Science: Materials in Electronics, 32 (2021), 6; 7123-7135 doi:10.1007/s10854-021-05422-7 (međunarodna recenzija, članak, znanstveni)
-
4.Thammaiah, Shivakumar D.; Liu, Xingyu; Knežević, Tihomir; Batenburg, Kevin M.; Aarnink, A.A.I.; Nanver, Lis K.PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility // Solid-State Electronics, 177 (2021), 107938, 10 doi:10.1016/j.sse.2020.107938 (međunarodna recenzija, članak, znanstveni)
-
5.Nanver, L. K.; Knezevic, Tihomir; Liu, X.; Thammaiah, S. D.; Krakers, M.;On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology // Journal of nanoscience and nanotechnology, 21 (2021), 4; 2472-2482 doi:10.1166/jnn.2021.19112 (međunarodna recenzija, članak, znanstveni)
-
6.Lovro Marković; Tihomir Knežević; Tomislav SuligojModeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode // 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO)
Opatija, Hrvatska, 2020. str. 28-33 doi:10.23919/MIPRO48935.2020.9245134 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
7.Krakers, M.; Knežević, T.; Batenburg, K.M.; Liu, X.; Nanver, L.K.Diode design for studying material defect distributions with avalanche–mode light emission // 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
Edinburgh, Ujedinjeno Kraljevstvo: Institute of Electrical and Electronics Engineers (IEEE), 2020. 9.2, 6 doi:10.1109/icmts48187.2020.9107933 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
8.Knežević, Tihomir; Krakers, Max; Nanver, Lis K.Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range // Proceedings SPIE 11276, Optical Components and Materials XVII, 112760I
San Francisco (CA), Sjedinjene Američke Države: SPIE, 2020. 112760I, 13 doi:10.1117/12.2546734 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
9.Nanver, Lis K.; Krakers, Max; Knezevic, Tihomir; Karavidas, A.; Agarwal, Vishal; Hueting, Ray; Dutta, Satadal; Boturchuk, Ievgen; Annema, Anne-JohanInvestigation of light-emission and avalanche- current mechanisms in PureB SPAD devices // Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Skukuza, Južnoafrička Republika: SPIE, 2019. 1104306, 14 doi:10.1117/12.2501598 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo) -
10.Knežević, Tihomir; Elsayed, Ahmed; Dick, Jan F.; Liu, Xingyu; Schulze, Joerg; Suligoj, Tomislav; Nanver, Lis K.Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C // Proceedings of the ESSDERC 49th European Solid- State Device Research Conference
Kraków, Poljska: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
11.Krakers, Max; Knezevic, T.; Nanver, L. K.Reverse breakdown and light-emission patterns studied in Si PureB SPADs // 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 30-35 doi:10.23919/mipro.2019.8757007 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
12.Knezevic, Tihomir; Nanver, Lis K.; Suligoj, TomislavMinimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment // Proceedings of SPIE - The International Society for Optical Engineering
San Francisco (CA): SPIE, 2019. 109120Y, 8 doi:10.1117/12.2508829 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
13.Knežević, Tihomir; Liu, Xingyu; Hardeveld, Erwin; Suligoj, Tomislav; Nanver, Lis K.Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes // IEEE electron device letters, 40 (2019), 6; 858-861 doi:10.1109/led.2019.2910465 (međunarodna recenzija, članak, znanstveni)
-
14.Knezevic, Tihomir; Suligoj, Tomislav; Nanver, Lis K.Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers // International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 24-29 doi:10.23919/mipro.2019.8757156 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
15.Nanver, L. K.; Liu, X.; Knezevic, TihomirTest structures without metal contacts for DC measurement of 2D-materials deposited on silicon // 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS 2018)
Austin (TX), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 69-74 doi:10.1109/icmts.2018.8383767 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
16.Knezevic, Tihomir; Nanver, Lis K.; Suligoj, Tomislav2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment // Proceedings of SPIE Vol. 10526 / Witzigmann, Bernd ; Osiński, Marek ; Arakawa, Yasuhiko (ur.).
San Francisco (CA): SPIE, 2018. 105261K, 10 doi:10.1117/12.2290757 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
17.Knežević, Tihomir; Nanver, Lis K.; Capan, Ivana; Suligoj, TomislavNon-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures // Proceedings of the 41st International Convention MIPRO 2018 / Biljanovic, Petar (ur.).
Rijeka: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 12-17 doi:10.23919/mipro.2018.8399822 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
18.Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, TomislavIndirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays // Optical and Quantum Electronics, 50 (2018), 3; 152, 13 doi:10.1007/s11082-018-1415-2 (međunarodna recenzija, članak, znanstveni)
-
19.Knežević TihomirPhysical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices, 2017., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
-
20.Tihomir Knežević; Lis K. Nanver; Tomislav SuligojTCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design // EMN Mauritius Meeting 2017 Program & Abstract
Port Louis, Mauricijus, 2017. str. 20-21 (pozvano predavanje, podatak o recenziji nije dostupan, prošireni sažetak, znanstveni) -
21.Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav;Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays // Proceedings of the 17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2017) / Piprek, Joachim (ur.).
Kopenhagen, Danska: Institute of Electrical and Electronics Engineers (IEEE), 2017. str. 69-70 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
22.Knežević, Tihomir; Lis K. Nanver; Suligoj, TomislavPerimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions // Proceedings of the 40th International Convention MIPRO 2017 / Petar Biljanović (ur.).
Rijeka: Croatian Society MIPRO, 2017. str. 80-84 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
23.Knežević, Tihomir; Nanver, Lis K.; Suligoj, TomislavSilicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches // Photonics (Basel), 3 (2016), 4; 54, 18 doi:10.3390/photonics3040054 (međunarodna recenzija, članak, znanstveni)
-
24.Knežević, Tihomir; Suligoj, TomislavExamination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment // 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) / Eberhard Bar, Jurgen Lorenz, Peter Pichler (ur.).
Nürnberg, 2016. str. 57-60 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
25.Knežević, Tihomir; Suligoj, TomislavAnalysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment // Proceedings of the 39th International Convention MIPRO 2016 / Biljanović, Petar (ur.).
Rijeka: Croatian Society MIPRO, 2016. str. 34-39 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
