Pregled po CROSBI profilu: Željko Pastuović (CROSBI Profil: 26629, MBZ: 229642)
Pronađeno 86 radova
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1.Bernat, Robert; Bakrač, Luka; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Capan, Ivana4H-SiC Schottky barrier diodes for efficient thermal neutron detection // Materials, 14 (2021), 17; 5105, 10 doi:10.3390/ma14175105 (međunarodna recenzija, članak, znanstveni)
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2.Coutinho, J; Gouveia, J.D.; Makino, T.; Ohshima, T.; Pastuović, Željko; Bakrač, Luka; Brodar, Tomislav; Capan, IvanaM center in 4H-SiC is a carbon self-interstitial // Physical review. B., 103 (2021), 180102, 4 doi:10.1103/PhysRevB.103.L180102 (međunarodna recenzija, pismo, znanstveni)
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3.Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, AdamResponse of 4H-SiC Detectors to Ionizing Particles // Crystals, 11 (2021), 1; 10, 13 doi:10.3390/cryst11010010 (međunarodna recenzija, članak, znanstveni)
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4.Ditalia Tchernij, S.; Lühmann, T.; Corte, E.; Sardi, F.; Picollo, F.; Traina, P.; Brajković, Marko; Crnjac, Andreo; Pezzagna, S.; Pastuović, Željko et al.Fluorine-based color centers in diamond // Scientific reports, 10 (2020), 21537, 7 doi:10.1038/s41598-020-78436-6 (međunarodna recenzija, članak, znanstveni)
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5.Radulović, Vladimir; Ambrožič, Klemen; Snoj, Luka; Capan, Ivana; Brodar, Tomislav; Ereš, Zoran; Pastuović, Željko; Sarbutt, Adam; Ohshima, Takeshi; Yamazaki, Yuichi; Coutinho, JoséE-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor // ANIMMA 2019 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications / Lyoussi, A. ; Giot, M. ; Carette, M. ; Jenčič, I. ; Reynard-Carette, C. ; Vermeeren, L. ; Snoj, L. ; Le Dû, P. (ur.).
Portorož, Slovenija: EDP Sciences, 2020. 07007, 6 doi:10.1051/epjconf/202022507007 (radionica, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
6.Brodar, Tomislav; Bakrač, Luka; Capan, Ivana; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Pastuović, ŽeljkoDepth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation // Crystals, 10 (2020), 9; 845, 16 doi:10.3390/cryst10090845 (međunarodna recenzija, članak, znanstveni)
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7.Coutinho, José; Torres, Vitor J. B.; Capan, Ivana; Brodar, Tomislav; Ereš, Zoran; Bernat, Robert; Radulovič, Vladimir; Ambrožič, Klemen; Snoj, Luka; Pastuović, Željko et al.Silicon carbide diodes for neutron detection // Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 986 (2020), 164793, 55 doi:10.1016/j.nima.2020.164793 (međunarodna recenzija, pregledni rad, znanstveni)
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8.Radulović, Vladimir; Yamazaki, Yuichi; Pastuović, Željko; Sarbutt, Adam; Ambrožič, Klemen; Bernat, Robert; Ereš, Zoran; Coutinho, José; Ohshima, Takeshi; Capan, Ivana; Snoj, LukaSilicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security // Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 (2020), 164122, 8 doi:10.1016/j.nima.2020.164122 (međunarodna recenzija, članak, znanstveni)
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9.Vittone, Ettore; Garcia Lopez, Javier; Jakšić, Milko; Jimenez Ramos, Carmen; Lohstroh, Annika; Pastuović, Željko; Rath, Shyama; Siegele, Reiner; Skukan, Natko; Vizkelethy, Georgy; Simon, AlizDetermination of radiation hardness of silicon diodes // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 449 (2019), 6-10 doi:10.1016/j.nimb.2019.04.032 (međunarodna recenzija, članak, znanstveni)
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10.Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José et al.Deep Level Defects in 4H-SiC Epitaxial Layers // ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials
Washington D.C., Sjedinjene Američke Države: Trans Tech Publications, Ltd., 2018. str. 225-228 doi:10.4028/www.scientific.net/msf.924.225 (ostalo, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
11.Radulović, Vladimir; Ambrožič, Klemen; Snoj, Luka; Capan, Ivana; Brodar, Tomislav; Ereš, Zoran; Pastuović, Željko; Sarbutt, Adam; Ohshima, Takeshi; Yamazaki, Yuichi; Coutinho, JoséE-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor // NENE 2018 - The 27th International Conference Nuclear Energy for New Europe
Portorož, Slovenija, 2018. 702, 1 (radionica, podatak o recenziji nije dostupan, sažetak, znanstveni) -
12.Brodar, Tomislav; Capan, Ivana; Radulovic, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, Jose; Ohshima, TakeshiLaplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 437 (2018), 1; 27-31 doi:10.1016/j.nimb.2018.10.030 (međunarodna recenzija, članak, znanstveni)
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13.Capan, Ivana; Brodar, Tomislav; Pastuović, željko; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Coutinho, Jose; Demouche, KamelDouble negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study // Journal of applied physics, 123 (2018), 16; 161597, 37 doi:10.1063/1.5011124 (međunarodna recenzija, članak, znanstveni)
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14.Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-icihiro; Ohshima, TakeshiDeep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime // Journal of physics. Condensed matter, 29 (2017), 47; 475701, 6 doi:10.1088/1361-648X/aa908c (međunarodna recenzija, članak, znanstveni)
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15.Vittone, E.; Pastuović, Željko; Breese, M.; Garcia Lopez, J.; Jakšić, Milko; Raisanen, J.; Siegele, R.; Simon, A.; Vizkelethy, G.Charge collection efficiency degradation induced by MeV ions in semiconductor devices : Model and experiment // Nuclear Instruments and Methods in Physics Research B, 372 (2016), 128-142 doi:10.1016/j.nimb.2016.01.030 (međunarodna recenzija, članak, znanstveni)
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16.Capan, Ivana; Pastuović, Željko; Siegele, Rainer; Jaćimović, RadojkoVacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372 (2016), 156-160 doi:10.1016/j.nimb.2015.12.039 (međunarodna recenzija, članak, znanstveni)
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17.Pastuović, Željko; Capan, Ivana; David D. Cohen; Jacopo, Forneris; Naoya, Iwamoto; Takeshi, Ohshima; Rainer, Siegele; Norihiro, Hoshino; Tsuchida, HidekazuRadiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 348 (2015), 233-239 doi:10.1016/j.nimb.2014.12.064 (međunarodna recenzija, članak, znanstveni)
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18.Pastuović, Željko; Capan, Ivana; ...; Vittone, EttoreGeneration of vacancy cluster-related defects during single MeV silicon ion implantation of silicon // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332 (2014), 298-302 doi:10.1016/j.nimb.2014.02.082 (međunarodna recenzija, članak, znanstveni)
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19.Zamboni, Ivana; Pastuović, Željko; Jakšić, MilkoRadiation hardness of single crystal CVD diamond detector tested with MeV energy ions // Diamond and related materials, 31 (2013), 65-71 doi:10.1016/j.diamond.2012.11.002 (međunarodna recenzija, članak, znanstveni)
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20.Zamboni, Ivana; Pastuović, Željko; Jakšić, MilkoRadiation hardness of single crystal CVD diamond detector tested with MeV energy ions // 2nd RBI Detector Workshop "Diamond Detectors Development and Applications": Book of Abstracts / Milko Jakšić, Tome Antičić, Mladen Kiš (ur.).
Zagreb: Institut Ruđer Bošković, 2012. str. 12-12 (predavanje, domaća recenzija, sažetak, znanstveni) -
21.Desnica, Vladan; Jakšić, Milko; Fazinić, Stjepko; Bogovac, Mladen; Pastuović, ŽeljkoIntegration of the PIXE and XRF spectrometries for simultaneous applications // Integration of Nuclear Spectrometry Methods as a New Approach to Material Research / Markowicz, Andrzej (ur.).
Beč: International Atomic Energy Agency (IAEA), 2011. str. 57-66 -
22.Fazinić, Stjepko; Pastuović, Željko; Jakšić, Milko; Kusijanović, K; Mudronja, Domagoj; Braun, Mario; Desnica, VladanCharacterization of inorganic pigments used by selected painters by using ion microprobe and other complementary techniques // Nuclear Techniques for Cultural Heritage Research / Markowicz, Andrzej (ur.).
Beč: International Atomic Energy Agency (IAEA), 2011. str. 147-164 -
23.Olivero, P.; Forneris, J.; Jakšić, Milko; Pastuović, Željko; Picollo, F.; Skukan, Natko; Vittone, E.Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 269 (2011), 20; 2340-2344 doi:10.1016/j.nimb.2011.02.021 (međunarodna recenzija, članak, znanstveni)
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24.Olivero, P.; Forneris, J.; Gamarra, P.; Jakšić, Milko; Giudice, A. Lo; Manfredotti, C.; Pastuović, Željko; Skukan, Natko; Vittone, E.Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 269 (2011), 20; 2350-2354 doi:10.1016/j.nimb.2011.02.020 (međunarodna recenzija, članak, znanstveni)
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25.Varašanec, Marijana; Bogdanović-Radović, Ivančica; Pastuović, Željko; Jakšić, MilkoCreation of microstructures using heavy ion beam lithography // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 269 (2011), 20; 2413-2416 doi:10.1016/j.nimb.2011.02.056 (međunarodna recenzija, članak, znanstveni)
