Pregled po CROSBI profilu: Mirko Poljak (CROSBI Profil: 23799, MBZ: 296014, ORCID: 0000-0001-7075-6688)
Pronađeno 126 radova
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76.Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons // Proceedings of the International Conference on Ultimate Integration on Silicon (ULIS) 2014 / Mikael Ostling ; Per-Erik Hellstrom ; Gunnar Malm (ur.).
Stockholm: KTH, 2014. str. 1-4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
77.Elektronika 1 - Laboratorijske vježbe
Zagreb: Fakultet elektrotehnike i računarstva Sveučilišta u Zagrebu, 2013 -
78.XPS Data interpretation of PureB layers, 2013. (podatak o recenziji nije dostupan, ekspertiza).
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79.Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers, 2013. (podatak o recenziji nije dostupan, ekspertiza).
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80.Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje, 2013. (podatak o recenziji nije dostupan, popularni rad).
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81.MORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates, 2013. (podatak o recenziji nije dostupan, računalni programski paket).
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82.Carrier transport in low-dimensional nanoelectronic devices, 2013., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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83.Influence of substrate type and quality on carrier mobility in graphene nanoribbons // Journal of applied physics, 114 (2013), 5; 053701-1 doi:10.1063/1.4817077 (međunarodna recenzija, članak, znanstveni)
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84.Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons // Solid-state electronics, 84 (2013), 6; 103-111 doi:10.1016/j.sse.2013.02.014 (međunarodna recenzija, članak, znanstveni)
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85.QUDEN - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons, 2012. (podatak o recenziji nije dostupan, računalni programski paket).
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86.Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons // Proceedings of the 42nd European Solid-State Device Research Conference (ESSDERC) / Deval, Yann ; Zimmer, Thomas ; Skotnicki, Thomas (ur.).
Bordeaux: Institute of Electrical and Electronics Engineers (IEEE), 2012. str. 298-301 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
87.Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons // IEEE transactions on electron devices, 59 (2012), 12; 3231-3238 doi:10.1109/TED.2012.2217969 (međunarodna recenzija, članak, znanstveni)
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88.Optimization of diode capacitance of Annular BS detector, 2012. (podatak o recenziji nije dostupan, ekspertiza).
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89.Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling // IEEE transactions on electron devices, 59 (2012), 6; 1636-1643 doi:10.1109/TED.2012.2189217 (međunarodna recenzija, članak, znanstveni)
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90.INGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors, 2011. (podatak o recenziji nije dostupan, računalni programski paket).
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91.Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
92.Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
93.Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: DENONA, 2011. str. 71-76 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
94.Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Solid-state electronics, 65/66 (2011), 130-138 doi:10.1016/j.sse.2011.06.039 (međunarodna recenzija, članak, znanstveni)
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95.Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana: BIRO M, 2010. str. 101-105 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
96.Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
97.Ultra-high aspect-ratio FinFET technology // Solid-state electronics, 54 (2010), 9; 870-876 doi:10.1016/j.sse.2010.04.021 (međunarodna recenzija, članak, znanstveni)
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98.Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 74-79 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
99.Analiza i optimiranje naprednih tranzistora s efektom polja – pregled područja i dosadašnjih rezultata, 2010. (podatak o recenziji nije dostupan, ostali radovi sa studija).
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100.Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Glasgow, 2010. str. 21-24 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
