Pregled po CROSBI profilu: Vladimir Jovanović (CROSBI Profil: 17252, MBZ: 233236)
Pronađeno 70 radova
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1.Grujić, Jovan; Jovanović, Vladimir; Tasić, Goran; Savić, Andrija; Stojiljković, Aleksandra; Matić, Siniša; Lepić, Milan; Rotim, Krešimir; Rasulić, LukasGiant Cavernous Malformation with Unusually Aggressive Clinical Course: a Case Report // Acta clinica Croatica, 59 (2020), 1; 183-187 doi:10.20471/acc.2020.59.01.24 (međunarodna recenzija, prikaz, znanstveni)
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2.Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, TomislavAssessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling // IEEE transactions on electron devices, 59 (2012), 6; 1636-1643 doi:10.1109/TED.2012.2189217 (međunarodna recenzija, članak, znanstveni)
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3.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavFeatures of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
4.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavInvestigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
5.Biasotto, Cleber; Gonda, Viktor; Nanver, Lis K.; Scholtes, Tom L.M.; van der Cingel, Johan; Vidal, Daniel; Jovanović, VladimirLow-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions // Journal of electronic materials, 40 (2011), 11; 2187-2196 doi:10.1007/s11664-011-1734-6 (međunarodna recenzija, članak, znanstveni)
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6.Hrauda, Nina; Zhang, Jianjun; Wintersberger, Eugen; Etzelstorfer, Tanja; Mandl, Bernhard; Stangl, Julian; Carbone, Dina; Holý, Vaclav; Jovanović, Vladimir; Biasotto, Cleber et al.X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor // Nano letters, 11 (2011), 7; 2875-2880 doi:10.1021/nl2013289 (međunarodna recenzija, članak, znanstveni)
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7.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavPhysics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: DENONA, 2011. str. 71-76 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
8.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavModeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Solid-state electronics, 65/66 (2011), 130-138 doi:10.1016/j.sse.2011.06.039 (međunarodna recenzija, članak, znanstveni)
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9.Nanver, Lis K.; Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G. et al.Integration of MOSFETs with SiGe dots as stressor material // Solid-state electronics, 60 (2011), 1; 75-83 doi:10.1016/j.sse.2011.01.038 (međunarodna recenzija, članak, znanstveni)
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10.Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Grützmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G.; Miglio, Leo et al.N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility // Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010
Veldhoven, Nizozemska, 2010. str. 101-104 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
11.Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K.; Moers, Juergen; Grützmacher, Detlev; Gerharz, Julian; Mussler, Gregor; van der Cingel, Johan; Zhang, Jianjun; Bauer, Guenther et al.MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility // Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long (ur.).
Šangaj, Kina, 2010. str. 926-928 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
12.Šakić, Agata; Civale, Yann; Nanver, Lis K.; Biasotto, Cleber; Jovanović, VladimirAl-mediated Solid-Phase Epitaxy of Silicon-On- Insulator // Materials Research Society Symposium Proceedings, Volume 1245 / Wang, Qi ; Yan, Baojie ; Flewitt, Andrew ; Tsai, Chuang-Chuang ; Higashi, Seiichiro (ur.).
Warrendale (PA): Materials Research Society, 2010. str. 427-432 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
13.Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav2-D front- and back-gate potential distribution model of submicrometer VFD SONFET // Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 69-73 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
14.Nanver, Lis K.; Biasotto, Cleber; Jovanović, Vladimir; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Bauer, Guenther; Schmidt, Oliver G.; Miglio, Leo; Kosina, Hans et al.SiGe dots as stressor material for strained Si devices // 5th International SiGe Technology and Device Meeting
Stockholm, Švedska, 2010. (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
15.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavPhysical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana: BIRO M, 2010. str. 101-105 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
16.Šakić, Agata; Jovanović, Vladimir; Maleki, Parastoo; Scholtes, Tom L.M.; Milosavljević, Silvana; Nanver, Lis K.Characterization of amorphous boron layers as diffusion barrier for pure aluminium // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 26-29 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
17.Hrauda, Nina; Etzelstorfer, Tanja; Strangl, Julian; Carbone, Dina; Bauer, Guenther; Biasotto, Cleber; Jovanović, Vladimir; Nanver, Lis; Moers, Juergen; Gruetzmacher, DetlevField-effect Transistor Devices Based on Strained Si Channels Above Buried 2D Periodic SiGe Quantum Dots // Material Research Society 2010 Spring Meeting
San Francisco (CA), Sjedinjene Američke Države, 2010. (poster, međunarodna recenzija, sažetak, znanstveni) -
18.Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K; Moers, Juergen; Gruetzmacher, Detlev; Gerharz Julian; Mussler, Gregor; van der Cingel, Johan; Zhang Jianjun; Bauer, Guenther et al.n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility // IEEE electron device letters, 31 (2010), 10; 1083-1085 doi:10.1109/LED.2010.2058995 (međunarodna recenzija, članak, znanstveni)
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19.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavModeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
20.Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.Ultra-high aspect-ratio FinFET technology // Solid-state electronics, 54 (2010), 9; 870-876 doi:10.1016/j.sse.2010.04.021 (međunarodna recenzija, članak, znanstveni)
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21.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavQuantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 74-79 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
22.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavOrientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Glasgow, 2010. str. 21-24 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
23.Sviličić, Boris; Jovanović, Vladimir; Suligoj, TomislavAnalysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 54 (2010), 5; 545-551 doi::10.1016/j.sse.2010.01.009 (međunarodna recenzija, članak, znanstveni)
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24.Poljak, Mirko; Jovanović, Vladimir; Suligoj, TomislavSuppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs // Microelectronic Engineering, 87 (2010), 2; 192-199 doi:10.1016/j.mee.2009.07.013 (međunarodna recenzija, članak, znanstveni)
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25.Nanver, Lis K; Jovanović, Vladimir; Biasotto, Cleber; van der Cingel, Johan; Milosavljević, SilvanaApplication of Laser Annealing in the EU FP6 Project D-DotFET // Proceedings of 17th International Conference on Advanced Thermal Processing of Semiconductors, RTP '09
Albany (NY), Sjedinjene Američke Države, 2009. str. 1-7 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
