Pregled po CROSBI profilu: Mladen Petravić (CROSBI Profil: 11615, MBZ: 112322)
Pronađeno 184 radova
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101.Petravić, Mladen; Deenapanray, P.N.K.Electrical transients in the ion-beam induced nitridation of silicon // Applied physics letters, 78 (2001), 22; 3445-3447 doi:10.1063/1.1376661 (međunarodna recenzija, članak, znanstveni)
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102.Deenapanray, Prakash N.K.Atomic relocation processes in semiconductor materials, 2000., doktorska disertacija, Department of Electronic Materials Engineering, Canberra
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103.Petravić, M.Chemical Reactions in Si under Reactive Ion Bombardment: How does it Affect SIMS? // APEC Workshop on Surface Analysis of New Materials, 2000.
Daejeon, Republika Koreja, 2000. (plenarno, pp prezentacija, znanstveni) -
104.Petravić, M.; Deenapanray, P.N.K.; Demanet, C.M.; and Moon, D.W.On the angular dependence of profile broadening in silicon under oxygen and nitrogen bombardment // Secondary Ion Mass Spectrometry, SIMS XII / Benninghoven, A. ; Bertrand, P. ; Migeon, H.-N. ; Werner, H.W. (ur.).
Amsterdam: Elsevier, 2000. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
105.Deenapanray, P.N.K.; Petravić, MladenSegregation effects of Li, K and F in Si during depth profiling by oxygen ions // Journal of applied physics, 87 (2000), 5; 2178-2184 doi:10.1063/1.372159 (međunarodna recenzija, članak, znanstveni)
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106.Deenapanray, P.N.K.; Petravić, MladenOn the segregation of Ca at SiO2/Si interface during oxygen ion bombardment // Surface and interface analysis, 29 (2000), 2; 160-167 doi:10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO ; 2-B (međunarodna recenzija, članak, znanstveni)
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107.Petravić, Mladen; Deenapanray, P.N.K.; Comtet, G.; Hellner, L.; Dujardin, G.; Usher, B.F.Selective Photon-Stimulated Desorption of Hydrogen from GaAs Surfaces // Physical Review Letters, 84 (2000), 2255-2258 doi:10.1103/PhysRevLett.84.2255 (međunarodna recenzija, članak, znanstveni)
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108.Moon, D.W.; Won, J.Y.; Kim, K.J.; Kim, H.J.; Kang, H.J.; Petravić, MladenGaAs delta-doped layers in Si for evaluation of SIMS depth resolution // Surface and interface analysis, 29 (2000), 6; 362-368 doi:10.1002/1096-9918(200006)29:6<362::AID-SIA864>3.0.CO ; 2-A (međunarodna recenzija, članak, znanstveni)
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109.Deenapanray, P.N.K.; Tan, H.H.; Cohen, M.I.; Gaff, K.; Petravić, Mladen; Jagadish, C.Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum well // Journal of the Electrochemical Society, 147 (2000), 5; 1950-1956 (međunarodna recenzija, članak, znanstveni)
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110.Deenapanray, P.N.K.; Fu, L.; Petravić, Mladen; Jagadish, C.; Gong, B.; Lamb, R.N.Pulsed anodic oxidation of GaAs for impurity-free interdiffusion og GaAs/AlGaAs quantum wells // Surface and interface analysis, 29 (2000), 11; 754-760 doi:10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO ; 2-D (međunarodna recenzija, članak, znanstveni)
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111.Deenapanray, P.N.K.; Lengyel, J.; Tan, H.H.; Petravić, Mladen; Durandet, A.; Williams, J.S.; Jagadish, C.Characterisation of low-tenperature PECVD silicon dioxide films // Materials Research Society Symphosium Proceedings Vol.555 / M. Pickering, B.W. Sheldon, W.Y. Lee, R.N. Johnson (ur.).
Warrendale (PA): MRS, 1999. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
112.Petravić, Mladen; Svensson, B.G.; Williams, J.S.On the estimation of depth resolution during sputter profiling // Applied physics letters, 62 (1999), 3; 278-280 doi:10.1063/1.108989 (međunarodna recenzija, članak, znanstveni)
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113.Petravić, Mladen; Hoffman, Alon; Comtet, Genevieve; Hellner, Lucile; Dujardin, GeraldPhoton-stimulated desorption of hydrogen ions from semiconductor surfaces: evidence for direct and indirect processes // Fizika A, 8 (1999), 275-280 (podatak o recenziji nije dostupan, članak, znanstveni)
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114.Williams, J.S.; Conway, M.J.; Wong-Leung, J.; Deenapanray, P.N.K.; Petravić, Mladen; Brown, R.A.; Eaglesham, D.J.; Jacobson, D.C.The role of oxygen on the stability of gettering of metals to cavities in silicon // Applied physics letters, 75 (1999), 16; 2424-2426 (međunarodna recenzija, članak, znanstveni)
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115.Deenapanray, P.N.K.; Petravić, MladenOn the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low- energy oxygen ions // Journal of applied physiology, 85 (1999), 8; 3993-3998 doi:10.1063/1.370302 (međunarodna recenzija, članak, znanstveni)
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116.Hoffman, A.; Petravić, Mladen; Comtet, G.; Hellner, L.; Dujardin, G; Heurtel, A.Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes // Physical review. B, Condensed matter and materials physics, 59 (1999), 4; 3203-3209 doi:10.1103/PhysRevB.59.3203 (međunarodna recenzija, članak, znanstveni)
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117.Deenapanray, P.N.K.; Petravić, MladenAngular and energy dependence of the ion beam oxidation of Si using oxygen ions from a dupolasmatron source // Surface and interface analysis, 27 (1999), 2; 92-97 doi:10.1002/(SICI)1096-9918(199902)27:2<92::AID-SIA472>3.0.CO ; 2-V (međunarodna recenzija, članak, znanstveni)
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118.Kinomura, A.; Williams, J.S.; Wong-Leung, J.; Petravić, Mladen; Nakano, Y.; Hayashi, Y.Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon // Applied physics letters, 73 (1998), 18; 2639-2641 (međunarodna recenzija, članak, znanstveni)
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119.Cardenas, J.; Svensson, B.G.; Petravić, MladenEvidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV // Journal of applied physics, 84 (1998), 9; 4809-4814 doi:10.1063/1.368722 (međunarodna recenzija, članak, znanstveni)
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120.Petravić, Mladen; Williams, J.S.; Conway, M.; Deenapanray, P.N.K.On the nitridation of silicon by low energy nitrogen bombardment // Applied physics letters, 73 (1998), 9; 1287-1289 (međunarodna recenzija, članak, znanstveni)
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121.Yuan, Shu; Jagadish, Chennupati; Kim, Yong; Chang, Yong; Tan, Hark Hoe; Cohen, Richard M.; Petravić, Mladen; Dao, Lap Van; Gal, Mike; Chan, Michael C. Y. et al.Anodic-oxide induced intermixing in GaAs/AlGaAs quantum well and quantum wire structures // Ieee journal of selected topics in quantum electronics, 4 (1998), 4; 629-635 doi:10.1109/2944.720473 (međunarodna recenzija, članak, znanstveni)
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122.Li, G.; Prince, K.E.; Petravić, Mladen; Chua, S.J.; Jagadish, C.J.Substrate orientation effect on Zn delta-doping in GaAs grown by metal organic vapour phase epitaxy // Journal of crystal growth, 191 (1998), 3; 357-360 doi:10.1016/S0022-0248(98)00144-4 (međunarodna recenzija, članak, znanstveni)
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123.Petravić, MladenOn the segregation of metals during low energy oxygen bombardment of silicon // Applied surface science, 135 (1998), 1-4; 200-204 (međunarodna recenzija, članak, znanstveni)
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124.Hoffman, A.; Comtet, G.; Hellner, L.; Dujardin, G.; Petravić, MladenSurface near-edge x-ray adsorption fine structure of hydrogenated diamond films and Di(100) surfaces studied by H+ and H- ion desorption // Applied physics letters, 73 (1998), 8; 1152-1154 (međunarodna recenzija, članak, znanstveni)
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125.Williams, J.S.; Conway, M.; Davies, J.A.; Petravić, Mladen; Tan, H.H.; Wong-Leung, J.Analysis of semiconductors by ion chaneling : applications and pitfalls // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 136/138 (1998), 453-459 doi:10.1016/S0168-583X(97)00721-0 (međunarodna recenzija, članak, znanstveni)
