Pregled po CROSBI profilu: Mladen Petravić (CROSBI Profil: 11615, MBZ: 112322)
Pronađeno 184 radova
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76.Majlinger, Zlatko; Božanić, Ana; Petravić, Mladen; Kim, K.-J.; Kim, B.; Yang, Y.-W.NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces // Vacuum, 84 (2009), 1 Special Issue; 41-44 (međunarodna recenzija, članak, znanstveni)
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77.Božanić, Ana; Majlinger, Zlatko; Petravić, Mladen; Gao, Q.; Llewellyn, D.; Crotti, C.; Yang Y.-W.; Kim, K.-J.; Kim, B.Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies // Vacuum, 84 (2009), 1 Special Issue; 37-40 (međunarodna recenzija, članak, znanstveni)
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78.Majlinger, Zlatko; Božanić, Ana; Petravić, Mladen; Kim, K.-J.; Kim, B.; Yang, Y.-W.Interaction of low-energy nitrogen ions with GaAs surfaces // Journal of applied physics, 104 (2008), 063527-1 (međunarodna recenzija, članak, znanstveni)
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79.Božanić, Ana; Majlinger, Zlatko; Petravić, Mladen; Gao, Q.; Llewellyn, D.; Crotti, C.; Yang, Y.-W.Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies // Journal of vacuum science & technology. B, 26 (2008), 4; 592-596 (međunarodna recenzija, članak, znanstveni)
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80.Petravić, MladenCharacterisation of nitrogen-related defects in compound semiconductors by near- edge x-ray absorption fine structure // 11th Joint Vacuum Conference (JVC-11), 2006.
Prag, Češka Republika, 2006. (plenarno, međunarodna recenzija, sažetak, znanstveni) -
81.Coleman, V.A.; Petravić, Mladen; Kim, K.-J.; Kim, B.; Li, G.Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment // Applied Surface Science, 252 (2006), 10; 3413-3416 doi:10.1016/j.apsusc.2005.06.007 (međunarodna recenzija, članak, znanstveni)
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82.Gareso, P.L.; Buda, M.; Petravić, Mladen; Tan, H.H.; Jagadish, C.Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structures // Journal of the Electrochemical Society, 153 (2006), 9; G879-G882 doi:10.1149/1.2220066 (međunarodna recenzija, članak, znanstveni)
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83.Soldatov, Alexander; Guda, A.; Kravtsova, A.; Petravić, Mladen; Deenapanray, P.N.K.; Fraser, M.D.; Yang, Y.-W.; Anderson, P.A.; Durbin, S.M.Nitrogen defect levels in InN: XANES study // Radiation Physics and Chemistry, 75 (2006), 11; 1635-1637 doi:10.1016/j.radphyschem.2005.07.021 (međunarodna recenzija, članak, znanstveni)
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84.Petravić, Mladen; Deenapanray, P. N. K.; Coleman, V. A.; Kim, K-J.; Kim, B.; Jagadish, C.; Kioke, K.; Sasa, S.; Inoue, M.; Yano, M.Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies // Surface Science, 600 (2006), 7; 81-85 doi:10.1016/j.susc.2006.01.015 (međunarodna recenzija, članak, znanstveni)
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85.Petravić, Mladen; Deenapanray, P. N. K.; Fraser, M. D.; Soldatov, A. V.; Yang, Y.-W.; Anderson, P. A.; Durbin, S. M.Direct observation of defect levels in InN by soft x-ray absorption // Journal of Physical Chemistry B, 110 (2006), 7; 2984-2987 doi:10.1021/jp057140l (međunarodna recenzija, članak, znanstveni)
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86.Petravić, Mladen; Gao, Q.; Llewellyn, D.; Deenapanray, P. N. K.; Macdonald, D.; Crotti, C.Broadening of vibrational levels in x-ray absorption spectroscopy of molecular nitrogen in compound semiconductors // Chemical Physics Letters, 425 (2006), 4-6; 262-266 doi:10.1016/j.cplett.2006.05.056 (međunarodna recenzija, članak, znanstveni)
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87.Yu, J.; Chen, Y.; Elliman, R.G.; Petravić, MladenIsotopically enriched (BN)-B-10 nanotubes // Advanced Materials, 18 (2006), 16; 2157-2160 (međunarodna recenzija, članak, znanstveni)
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88.Deenapanray, P.N.K.; Petravić, Mladen; Jagadish, C.; Krispin, M.; Auret, F.D.Influence of spin-on-glass doping on defect creation and impurity segregation in impurity-free disordered p-type GaAs // Journal of applied physics, 97 (2005), 3; 033524-1 doi:10.1063/1.1846140 (međunarodna recenzija, članak, znanstveni)
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89.Petravić, Mladen; Coleman, Victoria; Kim, Ki-Jeong; Kim, Bongsoo; Li, GangDefect acceptor and donor in ion-bombarded GaN // Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 23 (2005), 5; 1340-1345 (međunarodna recenzija, članak, znanstveni)
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90.Petravić, Mladen; Deenapanray, P.N.K.; Coleman, V.A.; Kim, K.-J.; Kim, B.; Li, G.Core-level photoemission and near edge x-ray absorption fine structure studies of GaN surface under low-energy ion bombardment // Journal of applied physics, 95 (2004), 10; 5487-5493 doi:10.1063/1.1707232 (međunarodna recenzija, članak, znanstveni)
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91.Veryovkin, I.V.; Calaway, W. F.; Moore, J. F.; Pellin, M. J.; Lewellen, J.W.; Li, Y.; Milton, S.V.; King, B.V.; Petravić, MladenA new horizon in secondary neutral mass spectrometry : post-ionization using a VUV free electron laser // Applied surface science, 231/232 (2004), 1; 962-966 doi:10.1016/j.apsusc.2004.03.191 (međunarodna recenzija, članak, znanstveni)
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92.Petravić, Mladen; Deenapanray, P.N.K.; B.F.Usher, B.F.; Kim, K.-J.; Kim, B.High-resolution photoemission study of hydrogen interaction with polar and non-polar GaAs surface // Physical Review B - Condensed Matter and Materials Physics, 67 (2003), 19; 195325-1 doi:10.1103/PhysRevB.67.195325 (međunarodna recenzija, članak, znanstveni)
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93.Deenapanray, P.N.K.; Petravić, Mladen; Kim, K.-J.; Kim, B.; Li, G.Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies // Applied physics letters, 83 (2003), 24; 4948-4950 doi:10.1063/1.1626792 (međunarodna recenzija, članak, znanstveni)
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94.Comtet, G.; Dujardin, G.; Hellner, L.; Petravić, M.Photon Induced Fabrication of Atomic Scale Structures on Surfaces // Photonic, Electronic and Atomic Collisions / Burgdörfer, J ; et al. (ur.).
Santa Fe (NM), Sjedinjene Američke Države: Rinton Press, 2002. (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
95.McCann, M.J.; Weber, K.J.; Petravić, Mladen; Blakers, A.W.Boron Doping of Silicon Layers Grown by Liquid-Phase-Epitaxy // Journal of crystal growth, 241 (2002), 1/2; 45-50 doi:10.1016/S0022-0248(02)01158-2 (međunarodna recenzija, članak, znanstveni)
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96.Williams, J.S.; Ridgway, M.C.; Conway, M.J.; Wong-Leung, J.; Williams, B.C.; Petravić, Mladen; Fortuna, F.; Ruault, M-O.; Bernas, H.Interaction of point defects and impurities with open volume defects in silicon // Mater.Res.Soc.Symp.Proc., Vol 647, Ion Beam Synthesis and Processing of Advanced Materials / Poker, D.B. ; Moss, S.C. ; Hening, K-H. (ur.).
Warrendale (PA): MRS, 2001. (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
97.Petravić, M.; Deenapanray, P.N.K.; Williams, J.S.Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities // Silicon Nitride and Silicon Oxide Thin Insulating Films, ECS, PV 2001-7 / Sundaram, K.B. (ur.).
Washington D.C., Sjedinjene Američke Države: ECS, 2001. str. 147-152 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
98.Stritzker, B.; Petravić, Mladen; Wong-Leung, J.; Williams, J.S.Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon // Applied physics letters, 78 (2001), 18; 2682-2684 doi:10.1063/1.1363689 (međunarodna recenzija, članak, znanstveni)
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99.Stritzker, B.; Petravić, Mladen; Wong-Leung, J.; Williams, J.S.Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 175-177 (2001), 154-158 doi:10.1016/S0168-583X(00)00610-8 (međunarodna recenzija, članak, znanstveni)
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100.Deenapanray, P.N.K.; Petravić, MladenLow energy O-2(+) and N-2(+) beam-induced profile broadening effects in Si // Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 19 (2001), 3; 893-898 doi:10.1116/1.1354602 (međunarodna recenzija, članak, znanstveni)
