Pregled po CROSBI profilu: Mladen Petravić (CROSBI Profil: 11615, MBZ: 112322)
Pronađeno 184 radova
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126.Wong-Leung, J.; Williams, J.S.; Petravić, MladenThe influence of cavities and point defects on boron diffusion in silicon // Applied physics letters, 72 (1998), 19; 2418-2420 (međunarodna recenzija, članak, znanstveni)
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127.Svensson, B.G.; Linnarsson, M.K.; Cardenas, J.; Petravić, MladenSIMS analysis of epitaxial layers for power- and micro-electronics // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 136/138 (1998), 1034-1039 doi:10.1016/S0168-583X(97)00791-X (međunarodna recenzija, članak, znanstveni)
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128.Guzman, I.; Hoffman, A.; Comtet, G.; Hellner, L.; Dujardin, G.; Petravić, MladenNanosize Diamond Formation Promoted By Direct Current Glow Discharge Process - Synchrotron Radiation And High Resolution Electron Microscopy Studies // Applied physics letters, 72 (1998), 20; 2517-2519 (međunarodna recenzija, članak, znanstveni)
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129.Kinomura, A.; Williams, J.S.; Wong-Leung, J.; Petravić, MladenMicrostructural difference between platinum and silver trapped in hydrogen induced cavities in silicon // Applied physics letters, 72 (1998), 21; 2713-2715 (međunarodna recenzija, članak, znanstveni)
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130.Wong-Leung, J.; Williams, J.S.; Petravić, Mladen; Kinomura, A.The role of cavities as strong sinks for interstitials in silicon // Secondary Ion Mass Spectrometry, SIMS XI / G.Gillen, R.Lareau, J.Bennet and F.Stevie (ur.).
Chichester: John Wiley & Sons, 1998. str. 237-241 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
131.Petravić, Mladen; Williams, James S.; Svensson, Bengt G.; Conway, MartinIon beam induced nitridation and oxidation of silicon // Secondary Ion Mass Spectrometry, SIMS XI / G.Gillen, R.Lareau, J.Bennet and F.Stevie (ur.).
Chichester: John Wiley & Sons, 1998. str. 331-335 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
132.Wehner, M.; Vianden, R.; Dalmer, M.; Hofsass, H.; Ridgway, M.C.; Petravić, MladenPerturbed angular correlation measurements and lattice site location of Br in GaAs // Materials science forum, 258-263 (1998), 1-3; 899-904 doi:10.4028/www.scientific.net/MSF.258-263.899 (međunarodna recenzija, članak, znanstveni)
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133.Fell, C.J.; King, B.V.; Petravić, MladenComparison of experimental measurement and molecular dynamics simulation of ion mixing in 60Ni/58Ni bilayers // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 223-226 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
134.Kinomura, A.; Wong-Leung, J.; Petravić, Mladen; Williams, J.S.Gettering of metals to nanocavities in silicon // Proceedings of 1996 Conference on Optoelectronic and Mocroelectronic Materials and Devices / C.Jagadish (ur.).
New York (NY): Institute of Electrical and Electronics Engineers (IEEE), 1997. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
135.Wong-Leung, J.; Williams, J.S.; Petravić, MladenThe influence of cavities and point defects on Cu gettering and B diffusion in Si' // Materials Research Society Symposium Proceedings Vol.469 / S.Coffa, T.Diaz de la Rubia, P.A.Stolk, C.S.Rafferty (ur.).
Pittsburgh (PA): MRS, 1997. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
136.Williams, J.S.; Petravić, Mladen; Conway, M.; Short, K.T.Radiation-induced segregation of metals at moving SiO2- amorphous Si interface // Materials Research Society Symposium Procceedings Vol.469 / S.Coffa, T.Diaz de la Rubia, P.A.Stolk, C.S.Rafferty (ur.).
Pittsburgh (PA): MRS, 1997. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
137.Mohadjeri, B.; Svensson, B.G.; Petravić, MladenOxidation-enhanced roughening of polycristalline cobalt films // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 347-351 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
138.Petravić, Mladen; Glasko, J.M.; Svensson, B.G.Temperature dependent segregation of impurities during SIMS depth profiling of Si // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 407-411 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
139.Petravić, Mladen; Williams, J.S.Electronic effects in sputtering of positive halogen ions from semiconductor surfaces // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 239-244 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
140.Li, G.; Petravić, Mladen; Jagadish, C.Electrical activation of carbon delta-doped (Al, Ga)As grown by metalorganic vapour-phase epitaxy // Journal of crystal growth, 173 (1997), 3-4; 302-306 doi:10.1016/S0022-0248(96)00810-X (međunarodna recenzija, članak, znanstveni)
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141.A.Kinomura, A.; Wong-Leung, J.; Petravić, Mladen; Williams, J.S.Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon // Nuclear instrumentsand methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127-128 (1997), 297-300 doi:10.1016/S0168-583X(96)00943-3 (međunarodna recenzija, članak, znanstveni)
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142.Williams, J.S.; Short, K.T.; Petravić, Mladen; Svensson, B.G.Oxidation of silicon by low energy oxygen ions // Nuclear Instruments and methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 121 (1997), 1-4; 24-29 doi:10.1016/S0168-583X(96)00536-8 (međunarodna recenzija, članak, znanstveni)
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143.Jones, K.S.; Elliman, R.G.; Petravić, Mladen; Kringhoj, P.Using doping superlattices to study transient enhanced diffusion of boron in regrown silicon // Applied physics letters, 68 (1996), 22; 3111-3113 doi:10.1063/1.116439 (međunarodna recenzija, članak, znanstveni)
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144.Petravić, Mladen; Svensson, Bengt Gunnar; Williams, Jean Sebastien; Glasko, J.M.Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118 (1996), 1-4; 151-155 doi:10.1016/0168-583X(96)00262-5 (međunarodna recenzija, članak, znanstveni)
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145.Mohadjeri, B.; Petravić, Mladen; Svensson, B.G.Oxidation-enhanced roughening of thin Co films during sputtering by O2+ ions // Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14 (1996), 4; 2192-2201 (međunarodna recenzija, članak, znanstveni)
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146.Hoffman, Alon; Petravić, MladenElectron stimulated desorption of negative and positive hydrogen ions from hydrogenated silicon surfaces // Physical review B : Condensed matter, 53 (1996), 11; 6996-6998 doi:10.1103/PhysRevB.53.6996 (međunarodna recenzija, članak, znanstveni)
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147.Li, G.; Petravić, Mladen; Jagadish, C.Very high carbon d-doping concentration in AlxGa1-xAs grown by metal organic vapour phase epitaxy using trimethylaluminium as a doping precurso // Journal of applied physics, 79 (1996), 3554-3559 doi:10.1063/1.361377 (međunarodna recenzija, članak, znanstveni)
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148.Petravić, Mladen; Williams, J.S.; Hoffman, A.Resonantlike desorption of negative ions by core-level excitation under electron bombardment // Physical review. B, Rapid communication, 53 (1996), 8; R4257-R4259 doi:10.1103/PhysRevB.53.R4257 (međunarodna recenzija, članak, znanstveni)
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149.King, B.V.; Sobhan, M.A.; Petravić, M.Ion beam mixing in metals // Surface Science, Principles and Current Applications / MacDonald, R.J. ; Taglauer, E.C. ; Wandelt ; K.R. (ur.).
Berlin: Springer, 1996. str. 127-138 -
150.Williams, J.S.; Wong-Leung, J.; Goldberg, R.D.; Petravić, MladenMicrostructure of irradiated silicon // Materials Research Society Symposium Proceedings Vol.373 / I.M. Robertson, L. E. Rehn, S.J. Zinkle, W. J. Phythian (ur.).
Pittsburgh (PA): MRS, 1995. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
