Pregled po CROSBI profilu: Mladen Petravić (CROSBI Profil: 11615, MBZ: 112322)
Pronađeno 184 radova
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101.Petravić, Mladen; Deenapanray, P.N.K.Electrical transients in the ion-beam induced nitridation of silicon // Applied physics letters, 78 (2001), 22; 3445-3447 doi:10.1063/1.1376661 (međunarodna recenzija, članak, znanstveni)
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102.Deenapanray, Prakash N.K.Atomic relocation processes in semiconductor materials, 2000., doktorska disertacija, Department of Electronic Materials Engineering, Canberra
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103.Petravić, M.Chemical Reactions in Si under Reactive Ion Bombardment: How does it Affect SIMS? // APEC Workshop on Surface Analysis of New Materials, 2000.
Daejeon, Republika Koreja, 2000. (plenarno, pp prezentacija, znanstveni) -
104.Petravić, M.; Deenapanray, P.N.K.; Demanet, C.M.; and Moon, D.W.On the angular dependence of profile broadening in silicon under oxygen and nitrogen bombardment // Secondary Ion Mass Spectrometry, SIMS XII / Benninghoven, A. ; Bertrand, P. ; Migeon, H.-N. ; Werner, H.W. (ur.).
Amsterdam: Elsevier, 2000. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
105.Deenapanray, P.N.K.; Petravić, MladenSegregation effects of Li, K and F in Si during depth profiling by oxygen ions // Journal of applied physics, 87 (2000), 5; 2178-2184 doi:10.1063/1.372159 (međunarodna recenzija, članak, znanstveni)
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106.Deenapanray, P.N.K.; Petravić, MladenOn the segregation of Ca at SiO2/Si interface during oxygen ion bombardment // Surface and interface analysis, 29 (2000), 2; 160-167 doi:10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO ; 2-B (međunarodna recenzija, članak, znanstveni)
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107.Petravić, Mladen; Deenapanray, P.N.K.; Comtet, G.; Hellner, L.; Dujardin, G.; Usher, B.F.Selective Photon-Stimulated Desorption of Hydrogen from GaAs Surfaces // Physical Review Letters, 84 (2000), 2255-2258 doi:10.1103/PhysRevLett.84.2255 (međunarodna recenzija, članak, znanstveni)
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108.Moon, D.W.; Won, J.Y.; Kim, K.J.; Kim, H.J.; Kang, H.J.; Petravić, MladenGaAs delta-doped layers in Si for evaluation of SIMS depth resolution // Surface and interface analysis, 29 (2000), 6; 362-368 doi:10.1002/1096-9918(200006)29:6<362::AID-SIA864>3.0.CO ; 2-A (međunarodna recenzija, članak, znanstveni)
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109.Deenapanray, P.N.K.; Tan, H.H.; Cohen, M.I.; Gaff, K.; Petravić, Mladen; Jagadish, C.Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum well // Journal of the Electrochemical Society, 147 (2000), 5; 1950-1956 (međunarodna recenzija, članak, znanstveni)
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110.Deenapanray, P.N.K.; Fu, L.; Petravić, Mladen; Jagadish, C.; Gong, B.; Lamb, R.N.Pulsed anodic oxidation of GaAs for impurity-free interdiffusion og GaAs/AlGaAs quantum wells // Surface and interface analysis, 29 (2000), 11; 754-760 doi:10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO ; 2-D (međunarodna recenzija, članak, znanstveni)
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111.Deenapanray, P.N.K.; Lengyel, J.; Tan, H.H.; Petravić, Mladen; Durandet, A.; Williams, J.S.; Jagadish, C.Characterisation of low-tenperature PECVD silicon dioxide films // Materials Research Society Symphosium Proceedings Vol.555 / M. Pickering, B.W. Sheldon, W.Y. Lee, R.N. Johnson (ur.).
Warrendale (PA): MRS, 1999. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
112.Petravić, Mladen; Svensson, B.G.; Williams, J.S.On the estimation of depth resolution during sputter profiling // Applied physics letters, 62 (1999), 3; 278-280 doi:10.1063/1.108989 (međunarodna recenzija, članak, znanstveni)
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113.Petravić, Mladen; Hoffman, Alon; Comtet, Genevieve; Hellner, Lucile; Dujardin, GeraldPhoton-stimulated desorption of hydrogen ions from semiconductor surfaces: evidence for direct and indirect processes // Fizika A, 8 (1999), 275-280 (podatak o recenziji nije dostupan, članak, znanstveni)
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114.Williams, J.S.; Conway, M.J.; Wong-Leung, J.; Deenapanray, P.N.K.; Petravić, Mladen; Brown, R.A.; Eaglesham, D.J.; Jacobson, D.C.The role of oxygen on the stability of gettering of metals to cavities in silicon // Applied physics letters, 75 (1999), 16; 2424-2426 (međunarodna recenzija, članak, znanstveni)
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115.Deenapanray, P.N.K.; Petravić, MladenOn the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low- energy oxygen ions // Journal of applied physiology, 85 (1999), 8; 3993-3998 doi:10.1063/1.370302 (međunarodna recenzija, članak, znanstveni)
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116.Hoffman, A.; Petravić, Mladen; Comtet, G.; Hellner, L.; Dujardin, G; Heurtel, A.Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes // Physical review. B, Condensed matter and materials physics, 59 (1999), 4; 3203-3209 doi:10.1103/PhysRevB.59.3203 (međunarodna recenzija, članak, znanstveni)
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117.Deenapanray, P.N.K.; Petravić, MladenAngular and energy dependence of the ion beam oxidation of Si using oxygen ions from a dupolasmatron source // Surface and interface analysis, 27 (1999), 2; 92-97 doi:10.1002/(SICI)1096-9918(199902)27:2<92::AID-SIA472>3.0.CO ; 2-V (međunarodna recenzija, članak, znanstveni)
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118.Kinomura, A.; Williams, J.S.; Wong-Leung, J.; Petravić, Mladen; Nakano, Y.; Hayashi, Y.Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon // Applied physics letters, 73 (1998), 18; 2639-2641 (međunarodna recenzija, članak, znanstveni)
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119.Cardenas, J.; Svensson, B.G.; Petravić, MladenEvidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV // Journal of applied physics, 84 (1998), 9; 4809-4814 doi:10.1063/1.368722 (međunarodna recenzija, članak, znanstveni)
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120.Petravić, Mladen; Williams, J.S.; Conway, M.; Deenapanray, P.N.K.On the nitridation of silicon by low energy nitrogen bombardment // Applied physics letters, 73 (1998), 9; 1287-1289 (međunarodna recenzija, članak, znanstveni)
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121.Yuan, Shu; Jagadish, Chennupati; Kim, Yong; Chang, Yong; Tan, Hark Hoe; Cohen, Richard M.; Petravić, Mladen; Dao, Lap Van; Gal, Mike; Chan, Michael C. Y. et al.Anodic-oxide induced intermixing in GaAs/AlGaAs quantum well and quantum wire structures // Ieee journal of selected topics in quantum electronics, 4 (1998), 4; 629-635 doi:10.1109/2944.720473 (međunarodna recenzija, članak, znanstveni)
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122.Li, G.; Prince, K.E.; Petravić, Mladen; Chua, S.J.; Jagadish, C.J.Substrate orientation effect on Zn delta-doping in GaAs grown by metal organic vapour phase epitaxy // Journal of crystal growth, 191 (1998), 3; 357-360 doi:10.1016/S0022-0248(98)00144-4 (međunarodna recenzija, članak, znanstveni)
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123.Petravić, MladenOn the segregation of metals during low energy oxygen bombardment of silicon // Applied surface science, 135 (1998), 1-4; 200-204 (međunarodna recenzija, članak, znanstveni)
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124.Hoffman, A.; Comtet, G.; Hellner, L.; Dujardin, G.; Petravić, MladenSurface near-edge x-ray adsorption fine structure of hydrogenated diamond films and Di(100) surfaces studied by H+ and H- ion desorption // Applied physics letters, 73 (1998), 8; 1152-1154 (međunarodna recenzija, članak, znanstveni)
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125.Williams, J.S.; Conway, M.; Davies, J.A.; Petravić, Mladen; Tan, H.H.; Wong-Leung, J.Analysis of semiconductors by ion chaneling : applications and pitfalls // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 136/138 (1998), 453-459 doi:10.1016/S0168-583X(97)00721-0 (međunarodna recenzija, članak, znanstveni)
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126.Wong-Leung, J.; Williams, J.S.; Petravić, MladenThe influence of cavities and point defects on boron diffusion in silicon // Applied physics letters, 72 (1998), 19; 2418-2420 (međunarodna recenzija, članak, znanstveni)
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127.Svensson, B.G.; Linnarsson, M.K.; Cardenas, J.; Petravić, MladenSIMS analysis of epitaxial layers for power- and micro-electronics // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 136/138 (1998), 1034-1039 doi:10.1016/S0168-583X(97)00791-X (međunarodna recenzija, članak, znanstveni)
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128.Guzman, I.; Hoffman, A.; Comtet, G.; Hellner, L.; Dujardin, G.; Petravić, MladenNanosize Diamond Formation Promoted By Direct Current Glow Discharge Process - Synchrotron Radiation And High Resolution Electron Microscopy Studies // Applied physics letters, 72 (1998), 20; 2517-2519 (međunarodna recenzija, članak, znanstveni)
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129.Kinomura, A.; Williams, J.S.; Wong-Leung, J.; Petravić, MladenMicrostructural difference between platinum and silver trapped in hydrogen induced cavities in silicon // Applied physics letters, 72 (1998), 21; 2713-2715 (međunarodna recenzija, članak, znanstveni)
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130.Wong-Leung, J.; Williams, J.S.; Petravić, Mladen; Kinomura, A.The role of cavities as strong sinks for interstitials in silicon // Secondary Ion Mass Spectrometry, SIMS XI / G.Gillen, R.Lareau, J.Bennet and F.Stevie (ur.).
Chichester: John Wiley & Sons, 1998. str. 237-241 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
131.Petravić, Mladen; Williams, James S.; Svensson, Bengt G.; Conway, MartinIon beam induced nitridation and oxidation of silicon // Secondary Ion Mass Spectrometry, SIMS XI / G.Gillen, R.Lareau, J.Bennet and F.Stevie (ur.).
Chichester: John Wiley & Sons, 1998. str. 331-335 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
132.Wehner, M.; Vianden, R.; Dalmer, M.; Hofsass, H.; Ridgway, M.C.; Petravić, MladenPerturbed angular correlation measurements and lattice site location of Br in GaAs // Materials science forum, 258-263 (1998), 1-3; 899-904 doi:10.4028/www.scientific.net/MSF.258-263.899 (međunarodna recenzija, članak, znanstveni)
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133.Fell, C.J.; King, B.V.; Petravić, MladenComparison of experimental measurement and molecular dynamics simulation of ion mixing in 60Ni/58Ni bilayers // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 223-226 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
134.Kinomura, A.; Wong-Leung, J.; Petravić, Mladen; Williams, J.S.Gettering of metals to nanocavities in silicon // Proceedings of 1996 Conference on Optoelectronic and Mocroelectronic Materials and Devices / C.Jagadish (ur.).
New York (NY): Institute of Electrical and Electronics Engineers (IEEE), 1997. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
135.Wong-Leung, J.; Williams, J.S.; Petravić, MladenThe influence of cavities and point defects on Cu gettering and B diffusion in Si' // Materials Research Society Symposium Proceedings Vol.469 / S.Coffa, T.Diaz de la Rubia, P.A.Stolk, C.S.Rafferty (ur.).
Pittsburgh (PA): MRS, 1997. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
136.Williams, J.S.; Petravić, Mladen; Conway, M.; Short, K.T.Radiation-induced segregation of metals at moving SiO2- amorphous Si interface // Materials Research Society Symposium Procceedings Vol.469 / S.Coffa, T.Diaz de la Rubia, P.A.Stolk, C.S.Rafferty (ur.).
Pittsburgh (PA): MRS, 1997. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
137.Mohadjeri, B.; Svensson, B.G.; Petravić, MladenOxidation-enhanced roughening of polycristalline cobalt films // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 347-351 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
138.Petravić, Mladen; Glasko, J.M.; Svensson, B.G.Temperature dependent segregation of impurities during SIMS depth profiling of Si // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 407-411 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
139.Petravić, Mladen; Williams, J.S.Electronic effects in sputtering of positive halogen ions from semiconductor surfaces // Secondary Ion Mass Spectrometry, SIMS X / A.Benninghoven, B.Hagenhoff and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1997. str. 239-244 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
140.Li, G.; Petravić, Mladen; Jagadish, C.Electrical activation of carbon delta-doped (Al, Ga)As grown by metalorganic vapour-phase epitaxy // Journal of crystal growth, 173 (1997), 3-4; 302-306 doi:10.1016/S0022-0248(96)00810-X (međunarodna recenzija, članak, znanstveni)
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141.A.Kinomura, A.; Wong-Leung, J.; Petravić, Mladen; Williams, J.S.Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon // Nuclear instrumentsand methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127-128 (1997), 297-300 doi:10.1016/S0168-583X(96)00943-3 (međunarodna recenzija, članak, znanstveni)
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142.Williams, J.S.; Short, K.T.; Petravić, Mladen; Svensson, B.G.Oxidation of silicon by low energy oxygen ions // Nuclear Instruments and methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 121 (1997), 1-4; 24-29 doi:10.1016/S0168-583X(96)00536-8 (međunarodna recenzija, članak, znanstveni)
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143.Jones, K.S.; Elliman, R.G.; Petravić, Mladen; Kringhoj, P.Using doping superlattices to study transient enhanced diffusion of boron in regrown silicon // Applied physics letters, 68 (1996), 22; 3111-3113 doi:10.1063/1.116439 (međunarodna recenzija, članak, znanstveni)
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144.Petravić, Mladen; Svensson, Bengt Gunnar; Williams, Jean Sebastien; Glasko, J.M.Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118 (1996), 1-4; 151-155 doi:10.1016/0168-583X(96)00262-5 (međunarodna recenzija, članak, znanstveni)
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145.Mohadjeri, B.; Petravić, Mladen; Svensson, B.G.Oxidation-enhanced roughening of thin Co films during sputtering by O2+ ions // Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14 (1996), 4; 2192-2201 (međunarodna recenzija, članak, znanstveni)
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146.Hoffman, Alon; Petravić, MladenElectron stimulated desorption of negative and positive hydrogen ions from hydrogenated silicon surfaces // Physical review B : Condensed matter, 53 (1996), 11; 6996-6998 doi:10.1103/PhysRevB.53.6996 (međunarodna recenzija, članak, znanstveni)
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147.Li, G.; Petravić, Mladen; Jagadish, C.Very high carbon d-doping concentration in AlxGa1-xAs grown by metal organic vapour phase epitaxy using trimethylaluminium as a doping precurso // Journal of applied physics, 79 (1996), 3554-3559 doi:10.1063/1.361377 (međunarodna recenzija, članak, znanstveni)
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148.Petravić, Mladen; Williams, J.S.; Hoffman, A.Resonantlike desorption of negative ions by core-level excitation under electron bombardment // Physical review. B, Rapid communication, 53 (1996), 8; R4257-R4259 doi:10.1103/PhysRevB.53.R4257 (međunarodna recenzija, članak, znanstveni)
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149.King, B.V.; Sobhan, M.A.; Petravić, M.Ion beam mixing in metals // Surface Science, Principles and Current Applications / MacDonald, R.J. ; Taglauer, E.C. ; Wandelt ; K.R. (ur.).
Berlin: Springer, 1996. str. 127-138 -
150.Williams, J.S.; Wong-Leung, J.; Goldberg, R.D.; Petravić, MladenMicrostructure of irradiated silicon // Materials Research Society Symposium Proceedings Vol.373 / I.M. Robertson, L. E. Rehn, S.J. Zinkle, W. J. Phythian (ur.).
Pittsburgh (PA): MRS, 1995. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
151.Acheron, C.E.; Wong-Leung, J.; Petravić, Mladen; Williams, J.S.Defect evolution in hydrogen implanted silicon // Proceedings of the 9th International Conference on Ion Beam Modification of Materials / J.S.Williams, R.G.Elliman and M.C.Ridgway (ur.).
Amsterdam: Elsevier, 1995. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
152.Fell, C.J.; King, B.V.; Petravić, Mladen; Wielunski, L.S.Ion beam mixing of isotopic nickel bilayers // Proceedings of the 9th International Conference on Ion Beam Modification of Materials / J.S.Williams, R.G.Elliman and M.C.Ridgway (ur.).
Amsterdam: Elsevier, 1995. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
153.Li, G.; Petravić, Mladen; Jagadish, C.Growth of Zn d-doped AlxGa1-xAs by low pressure metal organic vapour phase epitaxy // Journal of applied physics, 78 (1995), 5; 3546-3548 doi:10.1063/1.359930 (međunarodna recenzija, članak, znanstveni)
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154.Hoffman, A.; Moss, S.; Patterson, P.J.K.; Petravić, MladenElectron stimulated desorption of positive and negative ions from YBa2Cu3O7 surfaces // Journal of applied physics, 78 (1995), 11; 6858-6860 doi:10.1063/1.360450 (međunarodna recenzija, članak, znanstveni)
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155.Petravić, Mladen; Williams, James S.Electronic effects in ion-stimulated desorption of positive halogen ions from semiconductor surfaces // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101 (1995), 1-2; 64-68 doi:10.1016/0168-583X(95)00065-8 (međunarodna recenzija, članak, znanstveni)
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156.Petravić, Mladen; Williams, James S.Desorption of positive and negative fluorine ions from BaF2 surfaces by core level excitation under electron bombardment // Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13 (1995), 1; 26-29 doi:10.1116/1.579438 (međunarodna recenzija, članak, znanstveni)
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157.Wong-Leung, J.; Asheron, C.E.; Petravić, Mladen; Elliman, R.G.; Williams, J.S.Gettering of copper to hydrogen-induced cavities in silicon // Applied physics letters, 66 (1995), 10; 1231-1233 doi:10.1063/1.113246 (međunarodna recenzija, članak, znanstveni)
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158.Ascheron, C.E.; Petravić, Mladen; Williams, J.S.Incorporation of implanted hydrogen in Si // Trans.Mater.Res.Soc.Jpn. 17 / I. Yamada, et al. (ur.).
Tokyo, 1994. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
159.King, B.V.; Petravić, Mladen; Elliman, R.G.; Chater, R.J.Temperature dependence of SIMS depth profiles of Ag109/Ag107 bilayers // Secondary Ion Mass Spectrometry SIMS-IX / A.Benninghoven, Y.Nihei, R.Shimizu and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1994. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
160.Petravić, Mladen; Li, GangOn the estimation of depth resolution durind SIMS profiling in GaAs and GaAs/AlGaAs structures // Secondary Ion Mass Spectrometry, SIMS IX / A.Benninghoven, Y.Nihei, R.Shimizu and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1994. str. 960-964 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
161.Svensson, Bengt G.; Mohadjeri, Babak; Petravić, MladenSurface recession and oxidation of silicon during bombardment by low energy oxygen ions // Journal of applied physics, 76 (1994), 6; 3831-3834 doi:10.1063/1.357386 (međunarodna recenzija, članak, znanstveni)
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162.Williams, James S.; Petravić, Mladen; Svensson, Bengt. G.; Conway, MartinOxidation of silicon by low energy oxygen bombardment // Journal of applied physics, 76 (1994), 3; 1840-1846 doi:10.1063/1.357704 (međunarodna recenzija, članak, znanstveni)
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163.Svensson, B.G.; Linnarsson, M.; Mohadjeri, B.; Petravić, Mladen; Williams, J.S.SIMS and depth profiling of semiconductor structures // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85 (1994), 1-4; 363-369 doi:10.1016/0168-583X(94)95845-9 (međunarodna recenzija, članak, znanstveni)
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164.Petravić, MladenDepth resolution during sputter profiling of Si in GaAs // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85 (1994), 1-4; 388-390 doi:10.1016/0168-583X(94)95850-5 (međunarodna recenzija, članak, znanstveni)
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165.Williams, J.S.; Goldberg, R.D.; Petravić, Mladen; Rao, Z.Phase transformations and compound formation during ion irradiation of materials // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84 (1994), 2; 199-203 doi:10.1016/0168-583X(94)95754-1 (međunarodna recenzija, članak, znanstveni)
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166.Petravić, MladenDesorption of positive and negative ions from SiO2/Si surfaces by electron excitation of core levels // Physical review. B, Condensed matter, 48 (1993), 4; 2627-2631 doi:10.1103/PhysRevB.48.2627 (međunarodna recenzija, članak, znanstveni)
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167.Prawer, S.; Hoffman, A.; Petravić, Mladen; Kalish, R.Conductivity in insulators due to implantation of conducting species // Journal of applied physics, 73 (1993), 8; 3841-3845 doi:10.1063/1.352893 (međunarodna recenzija, članak, znanstveni)
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168.Petravić, Mladen; Williams, J.S.; Wong, C.W.Electron stimulated desorption of positive and negative ions from SiO2/Si surfaces // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 78 (1993), 1-4; 333-336 doi:10.1016/0168-583X(93)95821-L (međunarodna recenzija, članak, znanstveni)
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169.Svensson, B.G.; Ridgway, M.C.; Petravić, MladenIsotope effect for mega-electronvolt boron ions in amorphous silicon // Journal of applied physics, 73 (1993), 10; 4836-4840 doi:10.1063/1.353798 (međunarodna recenzija, članak, znanstveni)
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170.Williams, J.S.; Elliman, R.G.; Ridgway, M.C.; Jagadish, C.; Ellingboe, S.L.; Goldberg, R.; Petravić, Mladen; Wong, W.C.; Dezhang, Z; Nygren, E.; Svensson, B.G.MeV implantation into semiconductors // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-81 (1993), 1; 507-513 doi:10.1016/0168-583X(93)96170-H (međunarodna recenzija, članak, znanstveni)
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171.Petravić, Mladen; Elliman, R.G.; Williams, J.S.Ion beam mixing in SIMS profiling of thin buried layers // Secondary Ion Mass Spectrometry, SIMS VIII / A.Benninghoven, K.T.F.Jansen, J.Tumpner and H.W.Werner (ur.).
Chichester: John Wiley & Sons, 1992. str. 367-370 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
172.Claphman, L.; Whitton, J.L.; Ridgway, M.C.; Hauser, N.; Petravić, MladenHigh-dose, heavy-ion implantation into metals-the use of a sacrificial carbon surface layer for increased dose retention // Journal of applied physics, 72 (1992), 9; 4014-4019 doi:10.1063/1.352254 (međunarodna recenzija, članak, znanstveni)
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173.Williams, J.S.; Petravić, Mladen; Li, Y.H.; Davies, J.A.; Palmer, G.Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 64 (1992), 1-4; 156-159 doi:10.1016/0168-583X(92)95457-3 (međunarodna recenzija, članak, znanstveni)
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174.Petravić, Mladen; Williams, J.S.Core ionization and ion ejection during SIMS analysis // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 64 (1992), 1-4; 659-662 doi:10.1016/0168-583X(92)95553-4 (međunarodna recenzija, članak, znanstveni)
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175.Ridgway, M.C.; Elliman, R.G.; Petravić, Mladen; Thornton, R.P.; Williams, J.S.The influence of implanted impurities on the termally-induced epitaxial recrystallization of CoSi2 // Journal of materials research, 6 (1991), 5; 1035-1039 doi:10.1557/JMR.1991.1035 (međunarodna recenzija, članak, znanstveni)
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176.Petravić, Mladen; Williams, J.S.Ion-induced noncollisional ejection of positive secondary ions // Surface science, 259 (1991), 1-2; 215-220 doi:10.1016/0039-6028(91)90539-5 (međunarodna recenzija, članak, znanstveni)
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177.Ilić, M.; Petravić, Mladen; Cooper, J.R.; Leontić, B.; Millat, O.; Bratina, G.Synthesis, oxygen treatment and AC susceptibility studies of YBaCuO single crystals // Fizika, 21 (1989), 27-30 (podatak o recenziji nije dostupan, članak, znanstveni)
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178.Petravić, Mladen; Forro, L.; Cooper, J.R.; Levy, F.Resistivity and threshold electric field measurements under pressure for the inorganic chain conductor (NbSe4)10/3I // Fizika, 21 (1989), 92-96 (podatak o recenziji nije dostupan, članak, znanstveni)
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179.Petravić, Mladen; Forro, Laszlo; Cooper, J.R.; Levy, F.Hall effect in the charge density wave system (NbSe4)10/3I // Physical review. B, Condensed matter, 40 (1989), 5; 2885-2888 doi:10.1103/PhysRevB.40.2885 (međunarodna recenzija, članak, znanstveni)
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180.Petravić, Mladen; Forro, Laszlo; Cooper, J.R.; Levy, F.High-pressure study of a charge density wave compound (NbSe4)10/3I // Physical review. B, Condensed matter, 40 (1989), 11; 8064-8067 doi:10.1103/PhysRevB.40.8064 (međunarodna recenzija, članak, znanstveni)
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181.Cooper, J.R.; Petravić, Mladen; Drobac, Đuro; Korin, B.; Brničević, Nevenka; Paljević, Matija; Collin, G.Low temperature AC susceptibility of yttrium barium copper oxide single crystals: Attempts to measure the superconducting penetration depth // Physica. C, Superconductivity, 153-155 (1988), 3; 1491-1492 doi:10.1016/0921-4534(88)90386-3 (međunarodna recenzija, članak, znanstveni)
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182.Forro, Laszlo; Petravić, Mladen; Leontić, BoranHall effect of the high Tc superconductors Y-Ba-Cu-O and Gd-Ba-Cu-O // Solid state communications, 65 (1988), 11; 1355-1358 doi:10.1016/0038-1098(88)90092-0 (međunarodna recenzija, članak, znanstveni)
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183.Petravić, Mladen; Tutis, Eduard; Hamzić, Amir; Forro, LaszloHall effect measurements in La2-xSrxCuO4 // Solid state communications, 65 (1988), 7; 573-576 doi:10.1016/0038-1098(88)90340-7 (međunarodna recenzija, članak, znanstveni)
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184.Petravić, Mladen; Hamzić, Amir; Leontić, Boran; Forro, LaszloTemperature dependence of the Hall effect in La2-xSrxCuO4 and ABa2Cu3O7 (A=Y, Gd) high temperature superconductors // International journal of modern physics A, 2 (1987), 4; 1067-1069 doi:10.1142/S0217979287001572 (međunarodna recenzija, članak, znanstveni)
