Pregled po CROSBI profilu: Željko Osrečki (CROSBI Profil: 33705, MBZ: 357284)
Pronađeno 18 radova
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1.The Effect of Collector Region Design on Large- Signal Performance of Horizontal Current Bipolar Transistor (HCBT) // IEEE transactions on electron devices, 7 (2023), 3278233, 6 doi:10.1109/TED.2023.3278233 (međunarodna recenzija, članak, znanstveni)
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2.Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits // 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
online ; Monterey (CA), Sjedinjene Američke Države: IEEE, 2021. str. 1-4 doi:10.1109/bcicts50416.2021.9682490 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
3.Radiofrequency power amplifiers in horizontal current bipolar transistor technology, 2021., doktorska disertacija, Fakultet elektrotehnike i računarstva, Zagreb
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4.Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2021. str. 22-27 doi:10.23919/mipro52101.2021.9597068 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo) -
5.Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications // 2021 IEEE Latin America Electron Devices Conference (LAEDC)
Meksiko: Institute of Electrical and Electronics Engineers (IEEE), 2021. str. 1-4 doi:10.1109/LAEDC51812.2021.9437969 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
6.Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor // IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS 2020)
Monterey (CA), Sjedinjene Američke Države, 2020. str. 1-4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
7.On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies // ECS Transactions / Jeffrey W. Fergus (ur.).
Honolulu (HI), Sjedinjene Američke Države: The Electrochemical Society (ECS), 2020. str. 111-117 doi:10.1149/09805.0111ecst (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
8.Doherty Power Amplifier in Horizontal Current Bipolar Transistor (HCBT) Technology // Proceedings of the 43st International Convention MIPRO 2020 (2020)
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2020. str. 62-66 doi:10.23919/MIPRO48935.2020.9245079 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
9.Measurement of RF Linear Operating Area of Bipolar Transistors // Ieee microwave and wireless components letters, 30 (2020), 11; 1057-1060 doi:10.1109/LMWC.2020.3027867 (međunarodna recenzija, članak, znanstveni)
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10.Horizontal Current Bipolar Transistor (HCBT) Technology for High Linearity RF Mixers // IEEE Transactions on Electron Devices, 67 (2020), 1511-1516 doi:10.1109/TED.2020.2973156 (međunarodna recenzija, članak, znanstveni)
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11.Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers // 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Nashville (TN), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 1-4 doi:10.1109/bcicts45179.2019.8972731 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
12.Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology // 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 70-75 doi:10.23919/mipro.2019.8756724 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
13.Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
San Diego (CA), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 186-189 doi:10.1109/BCICTS.2018.8551146 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
14.Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates // Proceedings of the 41st International Convention MIPRO 2018
Opatija, Hrvatska, 2018. str. 66-71 doi:10.23919/MIPRO.2018.8400013 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
15.Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements // Proceedings of the 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 72-77 doi:10.23919/mipro.2018.8400014 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
16.Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays // Optical and Quantum Electronics, 50 (2018), 3; 152, 13 doi:10.1007/s11082-018-1415-2 (međunarodna recenzija, članak, znanstveni)
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17.Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays // Proceedings of the 17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2017) / Piprek, Joachim (ur.).
Kopenhagen, Danska: Institute of Electrical and Electronics Engineers (IEEE), 2017. str. 69-70 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
18.Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes // Proceedings of the 39th International Convention MIPRO 2016 / Biljanović, Petar (ur.).
Rijeka: Croatian Society MIPRO, 2016. str. 40-45 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
