Pregled po CROSBI profilu: Uroš Desnica (CROSBI Profil: 20750, MBZ: 9386)
Pronađeno 204 radova
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101.Ivanda, Mile; Musić, Svetozar; Gotić, Marijan; Desnica, Uroš, V.; Tonejc, Anđelka M.; Bishof, T.; Kiefer, WolfgangThe effects of crystal size on the Raman spectra of nanophased CdSxSe1-x, TiO2, and GaAs // Functional materials, 6 (1999), 530-534 (podatak o recenziji nije dostupan, članak, znanstveni)
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102.Fang, Z-Q.; Look, D. C.; Pavlović, Mladen; Desnica, UrošRole of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy // Journal of electronic materials, 28 (1999), 27-30 (međunarodna recenzija, članak, znanstveni)
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103.Desnica, Uroš; Desnica-Franković, Dunja Ida; Magerle, Robert; Deicher, ManfredCompensating defects and electrical activation of donors in CdS // Physica B, 273-274 (1999), 907-910 (međunarodna recenzija, članak, znanstveni)
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104.Desnica-Franković, Dunja Ida; Desnica, Uroš; Stötzler, Arno; Deicher, ManfredStudy of microscopic mechanisms of electrical compensation of donors in CdS by fast diffusors (Cu, Ag, or Au) // Physica B., 274 (1999), 887-890 (međunarodna recenzija, članak, znanstveni)
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105.Desnica, Uroš; Desnica-Franković, Dunja Ida; Magerle, Robert; Deicher, ManfredExperimental evidence of self-compensation mechanism in CdS // Journal of crystal growth, 197 (1999), 3; 612-615 (međunarodna recenzija, članak, znanstveni)
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106.Desnica, Uroš; Franković, Bernard; Hrastnik, Branimir; Miščević, Ljubomir; Urli, NatkoSUNEN - Croatian Solar Energy Utilization Program // 2nd ISES Europe Solar Congress : EuroSun 98 : book of proceedings / Goetzberger, Adolf ; Krainer, Aleš (ur.).
Birmingham: International Solar Energy Society - Slovenian Section, 1999. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
107.Desnica, UrošDoping limits in II-VI compounds - Challenges, problems and solutions // Progress in crystal growth and characterization, 36 (1998), 4; 291-357 doi:10.1016/S0960-8974(98)00011-4 (međunarodna recenzija, pregledni rad, znanstveni)
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108.Hrastnik, Branimir; Desnica, Uroš; Franković, Bernard; Horvath, Laszlo; Jedriško, Claudia; Lenić, Kristian; Medica, Vladimir; Miščević, Ljubomir; Pavković, Branimir; Spinčić, Damir et al.SUNEN program korištenja energije sunca - prethodni rezultati i buduće aktivnosti. Zagreb: Energetski institut Hrvoje Požar, 1998 (ostalo)
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109.Pavlović, Mladen; Desnica, Uroš VladanKvantitativna analiza dubokih zamki u visokootpornim poluvodičima // Zbornik sažetaka 5. susreta vakuumista Hrvatske i Slovenije / Radić, Nikola (ur.).
Zagreb: Institut Ruđer Bošković, 1998. str. 7-7 (predavanje, međunarodna recenzija, sažetak, znanstveni) -
110.Desnica, Uroš; Desnica-Franković, Ida Dunja; Magerle, Robert; Deicher, ManfredExperimental evidence of self-compensation in II-VI compounds // Book of Abstracts of the E-MRS Spring Meeting 1998
Strasbourg: E-MRS, 1998. str. C18-C18 (poster, međunarodna recenzija, sažetak, znanstveni) -
111.Desnica, Uroš; Franković, Bernard; Hrastnik, Branimir; Miščević, Ljubomir; Urli, NatkoSUNEN - Croatian Solar Energy Utilization Program // Book of Abstracts of the EUROSUN '98 / Krainer, Aleš ; Perdan, R. ; Kristl, Ž. (ur.).
Ljubljana: International Solar Energy Society, Slovenian Section, 1998. str. I.3.3.-I.3.3. (predavanje, međunarodna recenzija, sažetak, stručni) -
112.Pavlović, MladenSvojstva visokootpornog galijeva arsenida: Analiza utjecaja defekata s dubokim nivoima, 1998., doktorska disertacija, PMF, Zagreb
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113.Pavlović, Mladen; Desnica, UrošImprovement in semi-insulating GaAs material quality: a comparative study of defects with deep levels // Japanese journal of applied physics, 37 (1998), 4687-4694 (međunarodna recenzija, članak, znanstveni)
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114.Pavlović, Mladen; Desnica, UrošPrecise determination of deep traps signatures and their relative and apsolute concentrations in SI GaAs // Journal of applied physics, 84 (1998), 4; 2018-2024 (međunarodna recenzija, članak, znanstveni)
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115.Desnica, UrošWide-bandgap II-VI compounds - can the efficient doping be acheaved? // Vacuum, 50 (1998), 3-4; 463-471 (međunarodna recenzija, članak, znanstveni)
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116.Gamulin, Ozren; Ivanda, Mile; Desnica, Uroš; Furić, KrešimirStructural relaxation of amorphous silicon during thermal and cw laser annealing // Journal of non-crystalline solids, 230 (1998), B; 943-948 (međunarodna recenzija, članak, znanstveni)
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117.Desnica, Uroš V.; Desnica-Frankovic, Ida Dunja; Magerle, Robert; Burchard, Angela; Deicher, ManfredThe role of cation vacancy in compensation of II-VI compounds by fast diffusors - example of Cu in CdS // Materials Science Forum, 258-263 (1997), 3; 1347-1352 (međunarodna recenzija, članak, znanstveni)
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118.Desnica, Ida Dunja; Desnica, Uroš V.; Ivanda, Mile; Gracin, Davor; Haynes T.E.;Metastable amorphous structure in ion implanted GaAs // Materials Science Forum, 258-263 (1997), 1057-1062 (međunarodna recenzija, članak, znanstveni)
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119.Desnica, Uroš; Desnica-Franković, Ida Dunja; Magerle, Robert; Burchard, Angela; Deicher, ManfredCompensation of donors by fast diffusors in II-VI compounds // Abstracts Book of the ICDS19 / Davies, Gordon ; Nazare, M.H., eds. (ur.).
Aveiro: University of Aveiro, 1997. str. 14-14 (predavanje, međunarodna recenzija, sažetak, znanstveni) -
120.Pavlović, Mladen; Desnica, UrošImprovement in semi-insulating GaAs material quality through a decade : a comparative study of defects with deep levels // Extended abstracts of 7th joint vacuum conference of Hungary, Austria, Croatia and Slovenia / Bohatka, S. (ur.).
Deberecen, 1997. str. 117-118 (poster, međunarodna recenzija, sažetak, znanstveni) -
121.Desnica, Uroš V.Wide band-gap II-VI compounds : can the efficient doping be achieved? // Extended abstracts of the 7th joint vacuum conference of Hungary, Austria, Croatia and Slovenia / Bohatka, S. (ur.).
Deberecen, 1997. str. 31-32 (pozvano predavanje, međunarodna recenzija, sažetak, znanstveni) -
122.Desnica, Uroš; Desnica-Franković, Dunja Ida; Ivanda, Mile; Furić, Krešimir; Haynes, T. E.Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling // Physical Review B - Condensed Matter, 55 (1997), 24; 16205-16216 (međunarodna recenzija, članak, znanstveni)
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123.Gamulin, Ozren; Ivanda, Mile; Desnica, Uroš; Furić, KrešimirComparison of structural changes in amorphous silicon induced by thermal and cw laser annealing // Journal of molecular structure, 410 (1997), 249-252 (međunarodna recenzija, članak, znanstveni)
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124.Desnica, Uroš V.; Desnica, Ida Dunja; Ivanda, Mile; Haynes, T. E.Morphology of the implantation-induced disorder in GaAs // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120 (1996), 1-4; 236-239 doi:10.1016/S0168-583X(96)00516-2 (međunarodna recenzija, članak, znanstveni)
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125.Budnar, M.; Kavčič, M.; Tadić, Tonči; Bogdanović, Ivančica; Jakšić, Milko; Desnica, UrošUse of high resolution x-ray spectrometer for the study of chemical effects in x-ray spectra // International journal of PIXE, 6 (1996), 51-57 (podatak o recenziji nije dostupan, članak, ostalo)
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126.Pavlović, Mladen; Desnica, Uroš; Radić, Nikola; Šantić, BrankoDefects with deep levels and their impact on optical absorption of semi-insulating GaAs // Strojarstvo : časopis za teoriju i praksu u strojarstvu, 38 (1996), 6; 257-260 (međunarodna recenzija, članak, znanstveni)
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127.Pavlović, Mladen; Šantić, Branko; Desnica, UrošA comparative study of deep levels in undoped semi-insulating gallium arsenide wafers using thermally stimulated current spectra // Journal of Physics D Applied Physics, 28 (1995), 5; 934-938 doi:10.1088/0022-3727/28/5/015 (međunarodna recenzija, članak, znanstveni)
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128.Ivanda, Mile; Desnica, Uroš V.; Haynes, T. E.; Hartmann, Ingo; Kiefer, WolfgangRaman study of damage processes in Si+-implanted GaAs // Journal of molecular structure, 348 (1995), 33-36 doi:10.1016/0022-2860(95)08582-G (međunarodna recenzija, članak, znanstveni)
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129.Gracin, Davor; Radić, Nikola; Desnica, UrošMicrostructural properties of amorphous silicon alloys deposited by dc magnetron source // Vacuum, 46 (1995), 8-10; 943-946 doi:10.1016/0042-207X(95)00078-X (međunarodna recenzija, članak, znanstveni)
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130.Ivanda, Mile; Desnica, Uroš V.; Haynes T. E.Raman study of "boson" peak in ion-implanted GaAs: Dependence on ion dose and dose rate // Materials science forum, 143-147 (1994), 1387-1390 doi:10.4028/www.scientific.net/MSF.143-147.1387 (međunarodna recenzija, članak, znanstveni)
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131.Šantić, Branko; Desnica, Uroš; Radić, Nikola; Desnica, Dunja; Pavlović, MladenPhotoconductivity transients and photosensitization phenomena in semi-insulating GaAs // Journal of applied physics, 73 (1993), 10; 5181-5184 doi:10.1063/1.353795 (međunarodna recenzija, članak, znanstveni)
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132.Desnica, Uroš; Šantić, Branko; Desnica, Dunja; Pavlović, MladenTrapping and Recombination Processes via Deep Level T3 in Semi-Insulating Gallium Arsenide // Journal of Electronic Materials, 22 (1993), 403-407 (međunarodna recenzija, članak, znanstveni)
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133.Brničević, Nevenka; Bašić, Ivan; Planinić, Pavica; Paljević, Matija; Požek, Miroslav; Rakvin, Boris; Dulčić, Antonije; Desnica, Uroš; Desnica, Dunja; Reissner, M. et al.Superconducting Mixed-Metal Oxide Compounds of the Type Sr_2Ln_(1.5)Ce_(0.5)MCu_2O_(10-delta), Ln = Sm, Eu ; M = Nb, Ta // Proceedings of the International Winter School : Electronic Properties of High-Tc Superconductors : The Normal and the Superconducting State of High-Tc Materials / Kuzmany, H. ; Mehring, M. ; Fink, J. (ur.).
Berlin: Springer, 1993. str. 24-28 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni) -
134.Haynes, T. E.; Holland, O. W.; Desnica, Uroš V.Damage accumulation in gallium arsenide during silicon implantation near room temperature // Advanced III-V Compound Semiconductor Growth / Pearton, SJ ; Sadana, DK ; Zavada, JM. (ur.).
Pittsburgh (PA): Cambridge University Press, 1992. str. 823-828 -
135.Desnica, Uroš; Wagner, J.; Haynes, T. E.; Holland, O. W.Raman and ion channeling analysis of damage in ion-implemented GaAs : dependence on ion dose and dose rate // Journal of applied physics, 71 (1992), 6; 2591-2595 (međunarodna recenzija, članak, znanstveni)
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136.Benchiguer, T.; Mari, B.; Schwab, C.; Desnica, UrošDonor-acceptor pair as opposed to anion antisite metastability in bulk semi-insulating GaAs: electron paramagnetic resonance and photoconductivity data analysis // Japanese journal of applied physics, 31 (1992), 9; 2669-2672 doi:10.1143/JJAP.31.2669 (međunarodna recenzija, članak, znanstveni)
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137.Gracin, Davor; Desnica, Uroš; Ivanda, MileMicrostructural properties of DC magnetron sputtered a-Si:H by IR spectroscopy // Journal of Non-Crystalline Solids, 149 (1992), 3; 257-263 doi:10.1016/0022-3093(92)90074-T (međunarodna recenzija, članak, znanstveni)
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138.Šantić, Branko; Radić, Nikola; Desnica, UrošCalculation of the glow curve shape-application to thermally stimulated currents (TSC) // Solid state communications, 79 (1991), 6; 535-538 doi:10.1016/0038-1098(91)90046-X (međunarodna recenzija, članak, znanstveni)
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139.Corbett, James W.; Deak, Peter; Desnica, Uroš V., Pearton, Stephen J.Hydrogen Passivation of Damage Centers in Semiconductors // Hydrogen in Semiconductors / Pankove, Jaques I (ur.).
Lahti: Academic Press, 1991. str. 49-64 -
140.Desnica, Dunja Ida; Šantić, Branko; Desnica, Uroš V.Time-evolution of low-temperature photoconductivity and Hall mobility in semi-insulating GaAs // Applied Surface Science, 50 (1991), 1-4; 269-272 doi:10.1016/0169-4332(91)90179-N (međunarodna recenzija, članak, znanstveni)
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141.Desnica, Uroš V.; Petrović, Bojan G.; Skowronski, Marek; Cretella, M. C.On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers // Journal de Physique. III, 1 (1991), 9; 1481-1487 (međunarodna recenzija, članak, znanstveni)
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142.Desnica, Uroš; Desnica, Dunja Ida; Šantić, BrankoEl2 related deep traps in semi-insulating GaAs // Applied physics letters, 58 (1991), 3; 278-280 doi:10.1063/1.104660 (međunarodna recenzija, članak, znanstveni)
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143.Magerle, Robert; Deicher, Manfred; Desnica, Uroš; Keller, R.; Pfeiffer, Walter; Pleiter, F.; Skudlik, H.; Wichert, ThomasDefects in CdS: In detected by perturbed angular correlation spectroscopy (PAC) // Applied Surface Science, 50 (1991), 1-4; 159-164 doi:10.1016/0169-4332(91)90156-E (međunarodna recenzija, članak, znanstveni)
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144.Desnica, Uroš; Desnica, Dunja Ida; Šantić, BrankoThe analysis of low-temperature photoconductivity evolution in semi-insulating GaAs // Journal of Physics : Condensed Matter, 3 (1991), 31; 5817-5824 (međunarodna recenzija, članak, znanstveni)
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145.Gracin, Davor; Desnica, Dunja; Desnica, Uroš; Radić, NikolaInfluence of posthydrogenization and thermal treatment on DOS in a DC magnetron deposited a-Si:H by thermostimulated conductivity // Vacuum, 40 (1990), 1-2; 237-238 doi::10.1016/0042-207X(90)90221-J (međunarodna recenzija, članak, znanstveni)
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146.Šantić, Branko; Desnica, UrošThermo-electric effect spectroscopy of deep levels - application to semi-insulating GaAs // Applied physics letters, 56 (1990), 26; 2636-2638 doi:10.1063/1.102860 (međunarodna recenzija, članak, znanstveni)
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147.Šantić, Branko; Desnica, Dunja; Petrović, Bojan; Desnica, UrošQuenching and enhancement of photo-conductivity in semi-insulating GaAs // Solid state communications, 74 (1990), 8; 847-850 doi:10.1016/0038-1098(90)90948-B (međunarodna recenzija, članak, znanstveni)
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148.Desnica, Uroš; Desnica, Dunja Ida; Šantić, BrankoLight-intensity dependence of slow-relaxation phenomena in semiinsulating GaAs // Applied Physics. A, 51 (1990), 5; 379-381 (međunarodna recenzija, članak, znanstveni)
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149.Pivac, Branko; Borghesi, A.; Moscardini, M.; Bottazzi, P.; Desnica, UrošSiC-like structures in edge-defined film-fed growth polysilicon ribbons // Journal of Materials Science Letters, 9 (1990), 4; 397-399 doi:10.1007/BF00721010 (međunarodna recenzija, članak, znanstveni)
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150.Desnica, Uroš; Šantić, BrankoTrap-induced photoconductivity in semiinsulating GaAs // Journal of applied physics, 67 (1990), 3; 1408-1411 doi:10.1063/1.345697 (međunarodna recenzija, članak, znanstveni)
