Naslov
Spin nano-diodes based on doped hexagonal BN

Autori
Lukačević, Igor ; Gupta, Sanjeev K. ; He, Haiying ; Pandey, Ravindra

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Abstract Book International Conference on Advances in Basic Sciences / Ghosh, Arindam - Bahal, 2019, 3-4

Skup
International Conference on Advances in Basic Sciences

Mjesto i datum
Bahal, Indija, 07.02.2019. - 09.02.2019

Vrsta sudjelovanja
Plenarno

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
2D materials ; boron-nitride ; electron transport ; spin-diodes ; density functional theory

Sažetak
Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the two-dimensional lattice. In this talk, we present a h-BN monolayer doped with Si, C or Ge, and show that dopants modify the Fermi level of the pristine h-BN monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. The doped structures can be readily characterized using the STM imaging technique. The modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current. We also show that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA