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Pregled bibliografske jedinice broj: 955243

Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures


Knežević, Tihomir; Nanver, Lis K.; Capan, Ivana; Suligoj, Tomislav
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures // Proceedings of the 41st International Convention MIPRO 2018 / Biljanovic, Petar (ur.).
Rijeka: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 12-17 doi:10.23919/mipro.2018.8399822 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 955243 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures

Autori
Knežević, Tihomir ; Nanver, Lis K. ; Capan, Ivana ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 41st International Convention MIPRO 2018 / Biljanovic, Petar - Rijeka : Institute of Electrical and Electronics Engineers (IEEE), 2018, 12-17

Skup
41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2018) ; Microelectronics, Electronics and Electronic Technology (MEET 2018)

Mjesto i datum
Opatija, Hrvatska, 23.05.2018. - 25.05.2018

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
PureB ; non-linear ; current-voltage ; model ; low-temperature

Sažetak
Deposition of pure amorphous boron (PureB) layers on n-type Si results in p+ n-like devices even in cases where B in- diffusion during the deposition is not expected. It is suspected that such behavior is due to the formation of an interfacial hole layer (IHL) between the PureB and Si. To further investigate physical mechanisms governing conduction of holes across the PureB/Si interface and through the IHL, electrical measurements were performed from room temperature down to cryogenic temperatures as low as 100 K. In this paper, current-voltage (I-V) measurements are made on structures where the PureB connects to p-type Si regions. One set of devices comprises ring-shaped structures designed for measuring the conductance through the IHL. In these structures, the PureB layer is deposited in rings that are contacted at the inner and outer perimeter with Al. Another set of samples includes devices where the PureB layer was deposited on p-type bulk Si. At room temperature, a close to linear change of current with voltage was seen irrespective of the PureB layer thickness and post-deposition processing. Lowering the operating temperature led to an increasingly non-linear I-V characteristics. Plausible explanations for the non-linear behavior are considered and discussed in the paper.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Ivana Capan (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Tihomir Knežević (autor)

Poveznice na cjeloviti tekst rada:

doi

Citiraj ovu publikaciju:

Knežević, Tihomir; Nanver, Lis K.; Capan, Ivana; Suligoj, Tomislav
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures // Proceedings of the 41st International Convention MIPRO 2018 / Biljanovic, Petar (ur.).
Rijeka: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 12-17 doi:10.23919/mipro.2018.8399822 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Knežević, T., Nanver, L., Capan, I. & Suligoj, T. (2018) Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. U: Biljanovic, P. (ur.)Proceedings of the 41st International Convention MIPRO 2018 doi:10.23919/mipro.2018.8399822.
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Nanver, Lis K. and Capan, Ivana and Suligoj, Tomislav}, editor = {Biljanovic, P.}, year = {2018}, pages = {12-17}, DOI = {10.23919/mipro.2018.8399822}, keywords = {PureB, non-linear, current-voltage, model, low-temperature}, doi = {10.23919/mipro.2018.8399822}, title = {Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures}, keyword = {PureB, non-linear, current-voltage, model, low-temperature}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Opatija, Hrvatska} }
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Nanver, Lis K. and Capan, Ivana and Suligoj, Tomislav}, editor = {Biljanovic, P.}, year = {2018}, pages = {12-17}, DOI = {10.23919/mipro.2018.8399822}, keywords = {PureB, non-linear, current-voltage, model, low-temperature}, doi = {10.23919/mipro.2018.8399822}, title = {Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures}, keyword = {PureB, non-linear, current-voltage, model, low-temperature}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Opatija, Hrvatska} }

Časopis indeksira:


  • Scopus


Citati:





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