Pregled bibliografske jedinice broj: 955005
Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates
Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates // Proceedings of the 41st International Convention MIPRO 2018
Opatija, Hrvatska, 2018. str. 66-71 doi:10.23919/MIPRO.2018.8400013 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 955005 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates
Autori
Koričić, Marko ; Žilak, Josip ; Osrečki, Željko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 41st International Convention MIPRO 2018
/ - , 2018, 66-71
Skup
41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2018)
Mjesto i datum
Opatija, Hrvatska, 21.05.2018. - 25.05.2018
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
horizontal current bipolar transistor, potential shaping, high-voltage devices, open-base voltage, floating field plates
Sažetak
Open base breakdown voltage (BVCEO) tuning in Double-Emitter Horizontal Current Bipolar Transistor with floating field plates (FFPs) is analyzed by the device simulations. Tuning is obtained by stepping of the FFPs potential which is controlled via capacitive coupling between neighboring FFPs. When coupled, they serve as the field plates for shaping of the electric potential distribution, introducing the additional drift regions in base-collector depletion region. Breakdown mechanisms in case of partial and complete shielding of the collector E-field by the FFPs are identified. In case of partial shielding, the inner electric field peaks are responsible for breakdown, whereas in the case of complete shielding, breakdown occurs at the outermost drift region. In completely shielded device, very high BVCEO can be obtained by stacking a large number of FFPs. Devices with BVCEO up to 70 V are obtained.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb