Pregled bibliografske jedinice broj: 945571
Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and microstructuring mechanism
Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and microstructuring mechanism // Applied surface science, 455 (2018), 1086-1094 doi:10.1016/j.apsusc.2018.06.057 (međunarodna recenzija, članak, znanstveni)
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Naslov
Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and
microstructuring mechanism
(Lateral heterostructures of hexagonal boron
nitride and graphene: BCN alloy formation and
microstructuring mechanism)
Autori
Petrović, Marin ; Horn-von Hoegen, Michael ; Meyer zu Heringdorf, Frank-J.
Izvornik
Applied surface science (0169-4332) 455
(2018);
1086-1094
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
hexagonal boron nitride ; graphene ; 2D heterostructures ; BCN alloy ; LEEM ; micro-LEED
Sažetak
Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral heterostructures of hexagonal boron nitride and graphene are synthesized on Ir(1 1 1) by performing sequential chemical vapor deposition from borazine and ethylene in ultra- high vacuum. Low-energy electron microscopy (LEEM) and selected-area electron diffraction (μ-LEED) show that the heterostructures do not consist only of hexagonal boron nitride (an insulator) and graphene (a conductor), but that also a 2D alloy made up of B, C, and N atoms (a semiconductor) is formed. Composition and spatial extension of the alloy can be tuned by controlling the parameters of the synthesis. A new method for in situ fabrication of micro and nanostructures based on decomposition of hexagonal boron nitride is experimentally demonstrated and modeled analytically, which establishes a new route for production of BCN and graphene elements of various shapes. In this way, atomically-thin conducting and semiconducting components can be fabricated, serving as a basis for manufacturing more complex devices.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Interdisciplinarne prirodne znanosti
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus