Pregled bibliografske jedinice broj: 943764
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs // IEEE transactions on electron devices, 65 (2018), 7; 2784-2789 doi:10.1109/TED.2018.2838681 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 943764 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs
Autori
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
Izvornik
IEEE transactions on electron devices (0018-9383) 65
(2018), 7;
2784-2789
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Electron mobility, Fermi-level pinning (FLP), InGaAs, InP, interface states charge, strain, ultra-thin body
Sažetak
The electron mobility in strained ultra-thin InGaAs-on-InP MOSFETs is investigated combining band-structure and physics-based modeling including all relevant scattering mechanisms and effects. The most important effect is Fermi-level pinning which occurs due to high density of interface states at InGaAs/oxide interface. Different interface states densities are considered in order to investigate impact of interface states on electron mobility in biaxially strained ultra-thin InGaAs-on-InP structures. We report the tensile biaxial strain values that can alleviate the unfavorable impact of interface states charge on electron transport.
Izvorni jezik
Engleski
POVEZANOST RADA
Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
