Naslov
Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays

Autori
Osrečki, Željko ; Knežević, Tihomir ; Nanver, Lis K. ; Suligoj, Tomislav

Izvornik
Optical and Quantum Electronics (0306-8919) 50 (2018), 3; 152, 13

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Single-photon avalanche diode (SPAD) ; SPAD array ; Indirect optical crosstalk ; PureB

Sažetak
A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk-reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness and doping of the layer. A crosstalk reduction of 5 orders of magnitude is gained with addition of 1-μm-thick PureB/a-Si stack for the array processed on a p-type substrate, while the same reduction is achieved with a 1-μm-thick highly-doped Si layer (As, 1.1x10^(20) cm^(-3)) for an array processed on an n-type substrate.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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