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Pregled bibliografske jedinice broj: 941304

Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures


Lazić, Predrag; Belashchenko, K. D.; Žutić, Igor
Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures // Physical review. B., 93 (2016), 24; 241401(R), 6 doi:10.1103/PhysRevB.93.241401 (domaća recenzija, članak, znanstveni)


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Naslov
Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures

Autori
Lazić, Predrag ; Belashchenko, K. D. ; Žutić, Igor

Izvornik
Physical review. B. (2469-9950) 93 (2016), 24; 241401(R), 6

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
room-temperature ; graphene ; spintronics ; ferromagnetism ; semiconductors ; transistor ; injection ; transport ; junctions ; devices

Sažetak
Electrostatic gating enables key functionality in modern electronic devices by altering the properties of materials. While classical electrostatics is usually sufficient to understand the effects of gating in extended systems, the inherent quantum properties of gating in nanostructures offer unexplored opportunities for materials and devices. Using first-principles calculations for Co/bilayer graphene, Co/BN/graphene, and Co/BN/benzene, as well as a simple physical model, we show that heterostructures with two-dimensional materials yield tunable magnetic proximity effects. van der Waals bonding is identified as a requirement for large electronic structure changes by gating, enabling both the magnitude and sign change of spin polarization in physisorbed graphene. The ability to electrically reverse the spin polarization of an electrode provides an alternative to using the applied magnetic field or spin transfer torque in spintronic devices, thus transforming a spin valve into a spin transistor.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
EK-H2020-692194 - Institut Ruđer Bošković Twinning projekt: korak dalje za Zavod za teorijsku fiziku (RBI-T-WINNING) (Nesti, Fabrizio, EK ) ( CroRIS)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Predrag Lazić (autor)

Poveznice na cjeloviti tekst rada:

doi link.aps.org journals.aps.org

Citiraj ovu publikaciju:

Lazić, Predrag; Belashchenko, K. D.; Žutić, Igor
Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures // Physical review. B., 93 (2016), 24; 241401(R), 6 doi:10.1103/PhysRevB.93.241401 (domaća recenzija, članak, znanstveni)
Lazić, P., Belashchenko, K. & Žutić, I. (2016) Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures. Physical review. B., 93 (24), 241401(R), 6 doi:10.1103/PhysRevB.93.241401.
@article{article, author = {Lazi\'{c}, Predrag and Belashchenko, K. D. and \v{Z}uti\'{c}, Igor}, year = {2016}, pages = {6}, DOI = {10.1103/PhysRevB.93.241401}, chapter = {241401(R)}, keywords = {room-temperature, graphene, spintronics, ferromagnetism, semiconductors, transistor, injection, transport, junctions, devices}, journal = {Physical review. B.}, doi = {10.1103/PhysRevB.93.241401}, volume = {93}, number = {24}, issn = {2469-9950}, title = {Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures}, keyword = {room-temperature, graphene, spintronics, ferromagnetism, semiconductors, transistor, injection, transport, junctions, devices}, chapternumber = {241401(R)} }
@article{article, author = {Lazi\'{c}, Predrag and Belashchenko, K. D. and \v{Z}uti\'{c}, Igor}, year = {2016}, pages = {6}, DOI = {10.1103/PhysRevB.93.241401}, chapter = {241401(R)}, keywords = {room-temperature, graphene, spintronics, ferromagnetism, semiconductors, transistor, injection, transport, junctions, devices}, journal = {Physical review. B.}, doi = {10.1103/PhysRevB.93.241401}, volume = {93}, number = {24}, issn = {2469-9950}, title = {Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures}, keyword = {room-temperature, graphene, spintronics, ferromagnetism, semiconductors, transistor, injection, transport, junctions, devices}, chapternumber = {241401(R)} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus
  • Nature Index


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