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Pregled bibliografske jedinice broj: 934408

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Capan, Ivana; Brodar, Tomislav; Pastuović, željko; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Coutinho, Jose; Demouche, Kamel
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study // Journal of applied physics, 123 (2018), 16; 161597, 37 doi:10.1063/1.5011124 (međunarodna recenzija, članak, znanstveni)

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Naslov
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Autori
Capan, Ivana ; Brodar, Tomislav ; Pastuović, željko ; Ohshima, Takeshi ; Snoj, Luka ; Radulović, Vladimir ; Coutinho, Jose ; Demouche, Kamel

Izvornik
Journal of applied physics (0021-8979) 123 (2018), 16; 161597, 37

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon carbide ; defects ; DLTS ; DFT

Sažetak
We present results from combined Laplace-Deep Level Transient Spectroscopy (Laplace-DLTS) and density functional theory studies of the carbon vacancy (VC) in n-type 4H-SiC. Using Laplace-DLTS, we were able to distinguish two previously unresolved sub-lattice-inequivalent emissions, causing the broad Z1/2 peak at 290 K that is commonly observed by conventional DLTS in n-type 4H-SiC. This peak has two components with activation energies for electron emission of 0.58 eV and 0.65 eV. We compared these results with the acceptor levels of VC obtained by means of hybrid density functional supercell calculations. The calculations support the assignment of the Z1/2 signal to a superposition of emission peaks from double negatively charged VC defects. Taking into account the measured and calculated energy levels, the calculated relative stability of VC in hexagonal (h) and cubic (k) lattice sites, as well as the observed relative amplitude of the Laplace- DLTS peaks, we assign Z1 and Z2 to VC(h) and VC(k), respectively. We also present the preliminary results of DLTS and Laplace-DLTS measurements on deep level defects (ET1 and ET2) introduced by fast neutron irradiation and He ion implantation in 4H-SiC. The origin of ET1 and ET2 is still unclear.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Tomislav Brodar (autor)

Avatar Url Željko Pastuović (autor)

Avatar Url Ivana Capan (autor)

Poveznice na cjeloviti tekst rada:

doi aip.scitation.org doi.org

Citiraj ovu publikaciju:

Capan, Ivana; Brodar, Tomislav; Pastuović, željko; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Coutinho, Jose; Demouche, Kamel
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study // Journal of applied physics, 123 (2018), 16; 161597, 37 doi:10.1063/1.5011124 (međunarodna recenzija, članak, znanstveni)
Capan, I., Brodar, T., Pastuović, ž., Ohshima, T., Snoj, L., Radulović, V., Coutinho, J. & Demouche, K. (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of applied physics, 123 (16), 161597, 37 doi:10.1063/1.5011124.
@article{article, author = {Capan, Ivana and Brodar, Tomislav and Pastuovi\'{c}, \v{z}eljko and Ohshima, Takeshi and Snoj, Luka and Radulovi\'{c}, Vladimir and Coutinho, Jose and Demouche, Kamel}, year = {2018}, pages = {37}, DOI = {10.1063/1.5011124}, chapter = {161597}, keywords = {silicon carbide, defects, DLTS, DFT}, journal = {Journal of applied physics}, doi = {10.1063/1.5011124}, volume = {123}, number = {16}, issn = {0021-8979}, title = {Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study}, keyword = {silicon carbide, defects, DLTS, DFT}, chapternumber = {161597} }
@article{article, author = {Capan, Ivana and Brodar, Tomislav and Pastuovi\'{c}, \v{z}eljko and Ohshima, Takeshi and Snoj, Luka and Radulovi\'{c}, Vladimir and Coutinho, Jose and Demouche, Kamel}, year = {2018}, pages = {37}, DOI = {10.1063/1.5011124}, chapter = {161597}, keywords = {silicon carbide, defects, DLTS, DFT}, journal = {Journal of applied physics}, doi = {10.1063/1.5011124}, volume = {123}, number = {16}, issn = {0021-8979}, title = {Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study}, keyword = {silicon carbide, defects, DLTS, DFT}, chapternumber = {161597} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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