Pregled bibliografske jedinice broj: 916438
Infrared protection system for high-voltage testing of SiC and GaN FETs used in DC-DC converters
Infrared protection system for high-voltage testing of SiC and GaN FETs used in DC-DC converters // Proceedings of the 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2016)
Opatija, Hrvatska, 2016. str. 72-75 doi:10.1109/MIPRO.2016.7522113 (predavanje, domaća recenzija, cjeloviti rad (in extenso), stručni)
CROSBI ID: 916438 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Infrared protection system for high-voltage testing of SiC and GaN FETs used in DC-DC converters
Autori
Hormot, Filip ; Bačmaga, Josip ; Barić, Adrijan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), stručni
Izvornik
Proceedings of the 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2016)
/ - , 2016, 72-75
Skup
39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2016)
Mjesto i datum
Opatija, Hrvatska, 30.05.2016. - 03.06.2016
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Domaća recenzija
Ključne riječi
hazardous DC voltage, high-voltage switch-mode power converter
Sažetak
This technical paper presents the design and testing of the protection system for evaluation of high-voltage devices and circuits, e.g. SiC and GaN devices or high-voltage switching DC-DC converters. The high-voltage testing area is protected from invading by an array of infrared (IR) emitters and detectors. Whenever an object passes through the IR protected space, a high- voltage DC source is disconnected from its power supply and harmful effects of high DC voltage are avoided. The functionality of the developed system is tested and its characteristic response timings are measured.
Izvorni jezik
Engleski
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
