Naslov
Spin-dependent electron transport in C and Ge doped BN monolayers

Autori
Gupta, Sanjeev K. ; He, Haiying ; Lukačević, Igor ; Pandey, Ravindra

Izvornik
PCCP. Physical chemistry chemical physics (1463-9076) 19 (2017), 45; 30370-30380

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
2D materials ; boron-nitride ; electron transport ; spin-diodes ; density functional theory

Sažetak
Recent advances in the synthesis and characterisation of h- BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current– voltage response, and spin-dependent current. We find that the spin-polarised transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

POVEZANOST RADA