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Pregled bibliografske jedinice broj: 906705

Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT)


Suligoj, Tomislav; Koričić, Marko; Žilak, Josip
Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2017 IEEE 30th International Conference on Microelectronics
Niš, Srbija: IEEE Electron Devices Society, 2017. str. 19-26 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT)

Autori
Suligoj, Tomislav ; Koričić, Marko ; Žilak, Josip

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2017 IEEE 30th International Conference on Microelectronics / - : IEEE Electron Devices Society, 2017, 19-26

ISBN
978-1-5386-2562-0

Skup
2017 IEEE 30th International Conference on Microelectronics

Mjesto i datum
Niš, Srbija, 09.10.2017. - 11.10.2017

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
BiCMOS technology, horizontal current bipolar transistor HCBT, device reliability, downconversion active mixer, divide-by-2 static divider, voltage-controlled oscillator

Sažetak
The Horizontal Current Bipolar Transistor (HCBT) technology, as an innovative concept of bipolar-CMOS integration, is presented. This low-cost integration, achieved by using only 2 or 3 additional lithography masks, allows the fabrication of HCBTs with high-performance characteristics (i.e., fT = 51 GHz, fmax = 61 GHz, BVCEO = 3.4 V). The HCBT reliability analysis based on stress tests usage, as a part of technology optimization, is presented. Several RF communication circuits in HCBT technology are designed and fabricated. The downconversion active mixer exhibits high-linearity performance (IIP3 > 25 dBm and CG > 4 dB) comparable to commercial mixers. The static divide-by-2 divider has maximum operation frequency higher than 11 GHz with only 39 mW of power consumption. The voltage-controlled oscillator with central frequency of 2.41 GHz and tuning range of 235 MHz, as an example of fully-integrated RF circuit, is demonstrated.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Josip Žilak (autor)


Citiraj ovu publikaciju:

Suligoj, Tomislav; Koričić, Marko; Žilak, Josip
Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2017 IEEE 30th International Conference on Microelectronics
Niš, Srbija: IEEE Electron Devices Society, 2017. str. 19-26 (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Suligoj, T., Koričić, M. & Žilak, J. (2017) Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT). U: Proceedings of the 2017 IEEE 30th International Conference on Microelectronics.
@article{article, author = {Suligoj, Tomislav and Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip}, year = {2017}, pages = {19-26}, keywords = {BiCMOS technology, horizontal current bipolar transistor HCBT, device reliability, downconversion active mixer, divide-by-2 static divider, voltage-controlled oscillator}, isbn = {978-1-5386-2562-0}, title = {Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT)}, keyword = {BiCMOS technology, horizontal current bipolar transistor HCBT, device reliability, downconversion active mixer, divide-by-2 static divider, voltage-controlled oscillator}, publisher = {IEEE Electron Devices Society}, publisherplace = {Ni\v{s}, Srbija} }
@article{article, author = {Suligoj, Tomislav and Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip}, year = {2017}, pages = {19-26}, keywords = {BiCMOS technology, horizontal current bipolar transistor HCBT, device reliability, downconversion active mixer, divide-by-2 static divider, voltage-controlled oscillator}, isbn = {978-1-5386-2562-0}, title = {Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT)}, keyword = {BiCMOS technology, horizontal current bipolar transistor HCBT, device reliability, downconversion active mixer, divide-by-2 static divider, voltage-controlled oscillator}, publisher = {IEEE Electron Devices Society}, publisherplace = {Ni\v{s}, Srbija} }




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