Pregled bibliografske jedinice broj: 887467
Gallium--nitride-on-diamond wafers and devices, and methods of manufacture
Gallium--nitride-on-diamond wafers and devices, and methods of manufacture
(2014)
CROSBI ID: 887467 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Gallium--nitride-on-diamond wafers and devices, and methods of manufacture
Autori
Babic, Dubravko ; Faili, Firooz ; Francis, Daniel ; Diduck, Quentin ; Ejeckam, Felix
Broj patenta
8, 674, 405
Godina
2014
Datum patenta
18.03.2014.
Sažetak
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Izvorni jezik
Engleski
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Dubravko Babić
(autor)