Pregled bibliografske jedinice broj: 887459
System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
(2002)
CROSBI ID: 887459 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
Autori
Aronson, Lewis B. ; Tan, Michael R. T. ; Corzine, Scott W. ; Babic, Dubravko I.
Broj patenta
6, 483, 862
Godina
2002
Datum patenta
19.11.2002.
Sažetak
A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulating and has a refractive index lower than that of the light emitting device and the photodetector. This configuration results in a light emitting device and photodetector structure that minimizes the capture of the spontaneous emission light output from the light emitting device by the photodetector while electrically isolating the light emitting device from the photodetector. The electrical isolation of the light emitting device from the photodetector results in a four terminal device in which the light emitting device and photodetector may be independently biased, and can therefore be operated at a very low bias voltage.
Izvorni jezik
Engleski
