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Pregled bibliografske jedinice broj: 887453

System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation


Babic, Dubravko I.
System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation
(2001)


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Naslov
System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation

Autori
Babic, Dubravko I.

Broj patenta
6, 236, 671

Godina
2001

Datum patenta
22.05.2001.

Sažetak
A light emitting device and heterojunction phototransistor combination having a structure where a p-type material terminal of a laser is common with an emitter of a PNP heterojunction phototransistor. This configuration results in a light emitting device and heterojunction phototransistor structure that has a drastically reduced bias voltage requirement and that allows independent biasing of the laser and the heterojunction phototransistor.

Izvorni jezik
Engleski



POVEZANOST RADA


Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

Pristup cjelovitom tekstu rada patft.uspto.gov

Citiraj ovu publikaciju:

Babic, Dubravko I.
System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation
(2001)
Babic, D. (2001) System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation, 6, 236, 671.
@patent{patent, author = {Babic, Dubravko I.}, year = {2001}, keywords = {}, title = {System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation}, keyword = {}, publisherplace = {Palo Alto, CA} }
@patent{patent, author = {Babic, Dubravko I.}, year = {2001}, keywords = {}, title = {System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation}, keyword = {}, publisherplace = {Palo Alto, CA} }




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