Naslov
Buried layer in a semiconductor formed by bonding

Autori
Babic, Dubravko Ivan ; Bowers, John E.

Broj patenta
6, 208, 007

Godina
2001

Datum patenta
27.03. 2001.

Nositelj prava
The Regents of the University of California (Oakland, CA), Sunnyvale, CA ; Santa Barbara, CA, US

Sažetak
Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.

Izvorni jezik
Engleski

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