Pregled bibliografske jedinice broj: 887447
Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
CROSBI ID: 887447 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
Autori
Ejeckam, Felix ; Francis, Daniel ; Diduck, Quentin ; Nasser- Faili, Firooz ; Babic , Dubravko
Broj patenta
8, 759, 134
Sažetak
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on- diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Izvorni jezik
Engleski
