Naslov
Diamond for enhanced GaN device performance

Autori
Ejeckam, F. ; Francis, D. ; Faili, F. ; Dodson, J. ; Twichen, D. J. ; Bollinger, B. ; Babic, D.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2014 IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) / - , 2014, 1206-1209

Skup
IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

Mjesto i datum
Orlando (FL), Sjedinjene Američke Države, 2014

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Thermal resistance, Gallium nitride, Thermal conductivity, HEMTs, Diamonds, Substrates

Sažetak
AlGaN/GaN high electron mobility transistors (HEMT) semiconductor technology holds promise for revolutionary improvements in the cost, size, weight, and performance of a broad range of military and commercial microelectronics [1]. However, exploiting the true capabilities of GaN is a compromise between the desired RF performance and the realities of current thermal solutions. In this work we present modeling and integration details on performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated on freestanding and mounted, heat-spreading diamond substrates. The excellent thermal properties of diamond substrates grown by chemical vapor deposition (CVD) provide a superior heat spreading material for electronic packages. The successful on-wafer integration of diamond with gallium nitride (GaN) has emerged as a critical solution for the expected thermal challenges of the next generation of high power RF and microwave devices.

Izvorni jezik
Engleski

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