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Pregled bibliografske jedinice broj: 887434

3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C

Ejeckam, F.; Babić, D. I.; Faili, F.; Francis, D.; Lowe, F.; Twitchen, D.; Bollinger, B.
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C // Proceedings of the Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
San Jose (CA), Sjedinjene Američke Države, 2014. str. 242-246 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C

Autori
Ejeckam, F. ; Babić, D. I. ; Faili, F. ; Francis, D. ; Lowe, F. ; Twitchen, D. ; Bollinger, B.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) / - , 2014, 242-246

Skup
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)

Mjesto i datum
San Jose (CA), Sjedinjene Američke Države, 09.03.2014. - 13.03.2014

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Gallium nitride, HEMTs, MODFETs, Diamonds, Logic gates, Temperature measurement, Aluminum gallium nitride

Sažetak
The authors report for the first time the observation of GaN-on-Diamond HEMTs each operating continuously at channel temperatures of 290°C and 350°C for 9, 000+ hrs and 3, 000+ hrs respectively per HEMT. No catastrophic failures were observed whereas all the control GaN-on-Si HEMTs exhibited catastrophic failures.

Izvorni jezik
Engleski



POVEZANOST RADA

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Dubravko Babić (autor)

Citiraj ovu publikaciju:

Ejeckam, F.; Babić, D. I.; Faili, F.; Francis, D.; Lowe, F.; Twitchen, D.; Bollinger, B.
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C // Proceedings of the Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
San Jose (CA), Sjedinjene Američke Države, 2014. str. 242-246 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Ejeckam, F., Babić, D., Faili, F., Francis, D., Lowe, F., Twitchen, D. & Bollinger, B. (2014) 3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C. U: Proceedings of the Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM).
@article{article, author = {Ejeckam, F. and Babi\'{c}, D. I. and Faili, F. and Francis, D. and Lowe, F. and Twitchen, D. and Bollinger, B.}, year = {2014}, pages = {242-246}, keywords = {Gallium nitride, HEMTs, MODFETs, Diamonds, Logic gates, Temperature measurement, Aluminum gallium nitride}, title = {3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C}, keyword = {Gallium nitride, HEMTs, MODFETs, Diamonds, Logic gates, Temperature measurement, Aluminum gallium nitride}, publisherplace = {San Jose (CA), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Ejeckam, F. and Babi\'{c}, D. I. and Faili, F. and Francis, D. and Lowe, F. and Twitchen, D. and Bollinger, B.}, year = {2014}, pages = {242-246}, keywords = {Gallium nitride, HEMTs, MODFETs, Diamonds, Logic gates, Temperature measurement, Aluminum gallium nitride}, title = {3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C}, keyword = {Gallium nitride, HEMTs, MODFETs, Diamonds, Logic gates, Temperature measurement, Aluminum gallium nitride}, publisherplace = {San Jose (CA), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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