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Pregled bibliografske jedinice broj: 887432

175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures

Babić, D. I.; Diduck, Q.; Khandavalli, C.; Francis, D.; Faili, F.; Ejeckam, F.
175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures // Proceedings of the International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO)
Opatija, Hrvatska, 2013. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures

Autori
Babić, D. I. ; Diduck, Q. ; Khandavalli, C. ; Francis, D. ; Faili, F. ; Ejeckam, F.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO) / - , 2013

Skup
International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO)

Mjesto i datum
Opatija, Hrvatska, 20.05.2013. - 24.05.2013

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Gallium nitride, Diamonds, HEMTs, MODFETs, Reliability, Temperature measurement

Sažetak
Hundred and seventy-five thousand device-hours of operating life at channel temperatures above 200°C is demonstrated on AlGaN/GaN HEMTs fabricated using GaN-on-diamond technology for the first time. No catastrophic failures and no drain-current drift larger than 10% from turning the devices on were recorded throughout this two-year DC test.

Izvorni jezik
Engleski



POVEZANOST RADA

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Dubravko Babić (autor)

Citiraj ovu publikaciju:

Babić, D. I.; Diduck, Q.; Khandavalli, C.; Francis, D.; Faili, F.; Ejeckam, F.
175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures // Proceedings of the International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO)
Opatija, Hrvatska, 2013. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Babić, D., Diduck, Q., Khandavalli, C., Francis, D., Faili, F. & Ejeckam, F. (2013) 175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures. U: Proceedings of the International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO).
@article{article, author = {Babi\'{c}, D. I. and Diduck, Q. and Khandavalli, C. and Francis, D. and Faili, F. and Ejeckam, F.}, year = {2013}, keywords = {Gallium nitride, Diamonds, HEMTs, MODFETs, Reliability, Temperature measurement}, title = {175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures}, keyword = {Gallium nitride, Diamonds, HEMTs, MODFETs, Reliability, Temperature measurement}, publisherplace = {Opatija, Hrvatska} }
@article{article, author = {Babi\'{c}, D. I. and Diduck, Q. and Khandavalli, C. and Francis, D. and Faili, F. and Ejeckam, F.}, year = {2013}, keywords = {Gallium nitride, Diamonds, HEMTs, MODFETs, Reliability, Temperature measurement}, title = {175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures}, keyword = {Gallium nitride, Diamonds, HEMTs, MODFETs, Reliability, Temperature measurement}, publisherplace = {Opatija, Hrvatska} }

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