Naslov
Diamond cools high-power transistors

Autori
Francis, D. ; Wasserbauer, J. ; Babić, Dubravko ; Faili, F. ; Ejeckam, F.

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, stručni

Izvornik
Abstracts of the ..... ; u: Compound Semiconductor 13 (2009) (2) / - , 2007, 25-25

Mjesto i datum
,

Vrsta sudjelovanja
Poster

Vrsta recenzije
Nije recenziran

Ključne riječi
Synthetic chemical vapor deposition ; Polycrystalline diamonds

Sažetak
Synthetic chemical vapor deposition (CVD) grown polycrystalline diamond has effective used for cooling high-power transistors. The polycrystalline diamond thin film is inserted underneath a GaN HEMT that can reduce the transistor's operating temperature and substantially increase its maximum output power. It is required to establish the optimal process for managing the intrinsic diamond stress and the large difference in thermal expansion coefficients between various materials lead to lower wafer bow. GaN epilayer that are grown on silicon or attached to diamond are under tension at any low processing temperature, because GaN's thermal expansion coefficient is larger than that of silicon or diamond. The transistors are expected to improve and emphasize the benefit of the highly conductive composite as the quality of GaN-on- diamond wafer improves.

Izvorni jezik
Engleski

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