Pregled bibliografske jedinice broj: 886944
GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules
GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules // Proceedings of the International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO)
Opatija, Hrvatska, 2010. str. 74-78 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 886944 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules
Autori
Babić, D. I. ; Diduck, Q. , Yenigalla, P. ; Schreiber, A. ; Francis, D. ; Faili, F. ; Ejeckam, F. ; Felbinger, J.G. ; Eastman, L. F.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO)
/ - , 2010, 74-78
Skup
International Convention on Information and Communications Technology, Electronics and Microelectronics (MIPRO),
Mjesto i datum
Opatija, Hrvatska, 25.05.2010. - 29.05.2010
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
FETs, Gallium nitride, Thermal resistance, Radio frequency, Gallium arsenide, Silicon carbide, HEMTs, MODFETs, Power generation, Electronic packaging thermal management
Sažetak
We describe the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modules. We perform thermal resistance measurements on these amplifiers using liquid-crystal thermography and show that they agree with theory and previously published measurements on GaN-on-diamond devices.
Izvorni jezik
Engleski
