Pregled bibliografske jedinice broj: 886943
Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects
Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects // Proceedings of the Compound Semiconductor Integrated Circuit Symposium
Monterey (CA), Sjedinjene Američke Države, 2010. str. 1-4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects
Autori
Trejo, M. ; Chabak, K. D. ; Poling, B. ; Gilbert, R. ; Crespo, A. ; Gillespie, J. K. ; Kossler, M. , Walker, D. E. ; Via, G. D. , Jessen, G. H. ; Francis, D. ; Babić, D. ; Ejeckam, F.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the Compound Semiconductor Integrated Circuit Symposium
/ - , 2010, 1-4
Skup
Compound Semiconductor Integrated Circuit Symposium (CSICS)
Mjesto i datum
Monterey (CA), Sjedinjene Američke Države, 2010
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Diamond-like carbon, Substrates, Silicon, Gallium nitride, Aluminum gallium nitride, MODFETs, HEMTs
Sažetak
In this work, we compare for the first time the performance results of AlGaN/GaN HEMTs processed on a free-standing chemical vapor deposition (CVD) polycrystalline diamond substrate and a silicon substrate with nominally the same epitaxial AlGaN/GaN layers both grown by metal-organic chemical vapor deposition (MOCVD). The objective of this work is to compare the small signal and DC trends of the transistors fabricated on the different substrates as a function of temperature. Wafer scale results were obtained from both wafers for 2 x 150 µm devices with gate lengths of 0.18µm and 0.20µm for the silicon and CVD diamond wafers respectively.
Izvorni jezik
Engleski
