Pregled bibliografske jedinice broj: 886939
Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance
Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance // Proceeding od the CS MANTECH Conference
Boston (MA), Sjedinjene Američke Države, 2012. str. 1-3 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 886939 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance
Autori
Tyhach, M. ; Bernstein, S. ; Saledas, P. ; Ejeckam, F. ; Babic, D. I. ; Faili, F. ; Francis, D.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceeding od the CS MANTECH Conference
/ - , 2012, 1-3
Skup
CS MANTECH Conference
Mjesto i datum
Boston (MA), Sjedinjene Američke Države, 23.04.2012. - 26.04.2012
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
GaN on Diamond, Diamond, GaN, MMIC
Sažetak
This paper discusses the result of work by Raytheon and Group4 Labs to compare performance between GaN HEMTs and a GaN MMIC when fabricated on silicon carbide and diamond substrates. Wafers were fabricated and the performance of the epi, process coupons, and individual FETs are compared. We also report on the design, fabrication, and performance of a GaN on Diamond MMIC power amplifier, the first of its kind to the knowledge of the authors.
Izvorni jezik
Engleski
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Dubravko Babić
(autor)