Naslov
AlGaN/GaN HEMT on Diamond Technology Demonstration

Autori
Jessen, G. H. ; Gillespie, J. K. ; Via, G. D. ; Crespo, A. ; Langley, D. ; Wasserbauer, J. ; Faili, F. ; Francis, D. ; Babić, D. ; Ejeckam, F. ; Guo, S. ; Eliashevich, I.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium / - , 2006, 271-274

Skup
IEEE Compound Semiconductor Integrated Circuits Symposium

Mjesto i datum
San Antonio (TX), Sjedinjene Američke Države, 2006

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Aluminum gallium nitride, Gallium nitride, HEMTs, Substrates, Thermal management, Thermal resistance, Thermal conductivity, Temperature, Silicon, FETs

Sažetak
This letter is a first report on the operation of AlGaN/GaN high-electron mobility transistors (HEMTs) atomically attached to a CVD diamond substrate. This technology demonstration shows the feasibility of producing GaN based devices on polycrystalline CVD diamond substrates to maximize heat extraction from devices operating at high power by situating the diamond substrates in the immediate proximity of the transistor channel. Such an approach offers tremendous opportunity for efficient and effective heat management of high power devices. We demonstrate the ability to preserve the electrical properties of AlGaN/GaN HEMTs throughout the GaN-on-diamond atomic attachment process and report on the fabricated DC and small-signal HEMT characteristics

Izvorni jezik
Engleski

POVEZANOST RADA