Pregled bibliografske jedinice broj: 886751
Comparison of GaN HEMTs on Diamond and SiC Substrates
Comparison of GaN HEMTs on Diamond and SiC Substrates // Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits
Venecija, Italija, 2007. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Comparison of GaN HEMTs on Diamond and SiC Substrates
Autori
Felbinger, J.G. ; Chandra, M.V.S. ; Sun, Y. ; Eastman, L.F. ; Wasserbauer, J. ; Faili, F. ; Babić, D. ; Francis, D. ; Ejeckam, F.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits
/ - , 2007
Skup
31th Workshop on Compound Semiconductor Devices and Integrated Circuits
Mjesto i datum
Venecija, Italija, 20.05.2007. - 23.05.2007
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers
Sažetak
The performance of AlGaN/GaN high-electron- mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on- diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.
Izvorni jezik
Engleski
