Pregled bibliografske jedinice broj: 886747
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress // Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Session 7
Austin (TX), Sjedinjene Američke Države, 2007. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress
Autori
Francis, D. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Ejeckam, F. ; Hong, W. ; Specht, P. ; Weber, E.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Session 7
/ - , 2007
Skup
International Conference on Compound Semiconductor Manufacturing Technology
Mjesto i datum
Austin (TX), Sjedinjene Američke Države, 14.05.2007. - 17.05.2007
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Gallium nitride, diamond, high-electron mobility transistors, X-Band, power, thermal management
Sažetak
Gallium-nitride high-electron-mobility transistors fabricated on diamond substrates are highly desired for use in high-power amplifiers for XBand radar systems and commercial cellular-base stations. Diamond substrates have high thermal conductivity which enables highly efficient removal of heat from the active device regions. This paper describes our progress towards manufacturability of commercial-grade galliumnitride-transistor epilayers on diamond substrates. We report on the fabrication of the thickest (100 μm) and largest (4”) GaN-onDiamond composite wafers to date and show selected material haracterization results.
Izvorni jezik
Engleski
