Pregled bibliografske jedinice broj: 886742
Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches
Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches // Proceedings of SPIE, volume 3627
Sjedinjene Američke Države, 1999. str. 186-192 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches
Autori
Sargent, L. J. ; Rorison, J. M. ; Kuball, M. ; Penty, R. V. ; White, I. H. ; Heard, P. J. ; Tan, M. R. ; Corzine, S. W. ; Babić, D. I. ; Wang, Shih-Yuan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of SPIE, volume 3627
/ - , 1999, 186-192
Skup
SPIE
Mjesto i datum
Sjedinjene Američke Države, 1999
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Vertical-Cavity Surface-Emitting Lasers ; Modeling ; Raman
Sažetak
Recent work has shown that the etching of deep trenches in close proximity to GaAs VCSEL apertures consistently causes the linear TE polarization of the emission to be pinned in a direction parallel to the line etch. Further enhancement of this polarization pinning has been achieved by post- annealing after etching. Initial studies have been carried out using photoluminescence and Raman measurements of the VCSEL wafer before and after etching as well as after annealing. Modeling the observed shift in the optical cavity (longitudinal) mode has indicated that etching introduces strain perpendicular to the etch in the active region of the VCSEL of 4 X 108 dyn/cm2. The strain causes the cavity mode to shift to longer wavelength and reduces the spontaneous emission in the direction perpendicular to the etched trenches. The strain introduced by etching is believed to be the origin of this polarization pinning effect. Measurements of the spontaneous emission profile across the VCSEL facet after etching give valuable information on the mechanisms involved.
Izvorni jezik
Engleski