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Pregled bibliografske jedinice broj: 886734

Structural and electrical characterization of the GaAs/InP wafer-fused interface

Black, K. A.; Abraham, P.; Chiu, Y-J.; Bowers, J. E.; Hu, E. L.; Chang, Y-L.; Babić, D. I.
Structural and electrical characterization of the GaAs/InP wafer-fused interface // Proceedings of the MRS 1997 Spring Meeting, Symposium C: Processing of Compound Semiconductors for High Speed Devices, paper C2.10
Sjedinjene Američke Države, 1997. str. 63-63 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Structural and electrical characterization of the GaAs/InP wafer-fused interface

Autori
Black, K. A. ; Abraham, P. ; Chiu, Y-J. ; Bowers, J. E. ; Hu, E. L. ; Chang, Y-L. ; Babić, D. I.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the MRS 1997 Spring Meeting, Symposium C: Processing of Compound Semiconductors for High Speed Devices, paper C2.10 / - , 1997, 63-63

Skup
MRS 1997 Spring Meeting, Symposium C: Processing of Compound Semiconductors for High Speed Device

Mjesto i datum
Sjedinjene Američke Države, 1997

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Optical design, Vertical cavity surface emitting lasers

Sažetak
Structural and electrical characterization of the GaAs/InP wafer-fused interface

Izvorni jezik
Engleski



POVEZANOST RADA

Profili:

Avatar Url Hrvoje Abraham (autor)

Avatar Url Dubravko Babić (autor)

Citiraj ovu publikaciju:

Black, K. A.; Abraham, P.; Chiu, Y-J.; Bowers, J. E.; Hu, E. L.; Chang, Y-L.; Babić, D. I.
Structural and electrical characterization of the GaAs/InP wafer-fused interface // Proceedings of the MRS 1997 Spring Meeting, Symposium C: Processing of Compound Semiconductors for High Speed Devices, paper C2.10
Sjedinjene Američke Države, 1997. str. 63-63 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Black, K., Abraham, P., Chiu, Y., Bowers, J., Hu, E., Chang, Y. & Babić, D. (1997) Structural and electrical characterization of the GaAs/InP wafer-fused interface. U: Proceedings of the MRS 1997 Spring Meeting, Symposium C: Processing of Compound Semiconductors for High Speed Devices, paper C2.10.
@article{article, author = {Black, K. A. and Abraham, P. and Chiu, Y-J. and Bowers, J. E. and Hu, E. L. and Chang, Y-L. and Babi\'{c}, D. I.}, year = {1997}, pages = {63-63}, keywords = {Optical design, Vertical cavity surface emitting lasers}, title = {Structural and electrical characterization of the GaAs/InP wafer-fused interface}, keyword = {Optical design, Vertical cavity surface emitting lasers}, publisherplace = {Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Black, K. A. and Abraham, P. and Chiu, Y-J. and Bowers, J. E. and Hu, E. L. and Chang, Y-L. and Babi\'{c}, D. I.}, year = {1997}, pages = {63-63}, keywords = {Optical design, Vertical cavity surface emitting lasers}, title = {Structural and electrical characterization of the GaAs/InP wafer-fused interface}, keyword = {Optical design, Vertical cavity surface emitting lasers}, publisherplace = {Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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