Naslov
Silicon hetero-interface photodetector

Autori
Hawkins, A. ; Reynolds, T. E. ; England, D. ; Babić, D. I. ; Mondry, M. J. ; Bowers, J. E.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 1995 IEEE LEOS Annual Meeting / - , 1995

Skup
1995 IEEE LEOS Annual Meeting

Mjesto i datum
San Jose (CA), Sjedinjene Američke Države, 1995

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Silicon, Photodetectors, Indium gallium arsenide, Absorption, Charge carrier processes, Ionization, Signal to noise ratio, Semiconductor device noise, Bandwidth, III-V semiconductor materials

Sažetak
We propose and demonstrate a novel avalanche photodetector that uses separate InGaAs absorption and Si multiplication regions fabricated by wafer fusion. Directly integrating InGaAs and silicon layers in an avalanche photodetector combines the high long- wavelength absorption capabilities of InGaAs and the avalanche multiplication properties of Si. The large ratio of electron and hole ionization coefficients of silicon results in lower noise and a higher gain bandwidth product than achievable using III-V semiconductors in avalanche regions.

Izvorni jezik
Engleski

POVEZANOST RADA