Pregled bibliografske jedinice broj: 886558
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon // Proceedings of the 6th International Conference on InP and Related Materials paper WE4
Santa Barbara (CA), Sjedinjene Američke Države, 1994. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon
Autori
Schramm, J. E. ; Babić, D. I. ; Hu, E. L. ; Bowers, J.E. ; Merz, J. L.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 6th International Conference on InP and Related Materials paper WE4
/ - , 1994
Skup
6th International Conference on InP and Related Materials
Mjesto i datum
Santa Barbara (CA), Sjedinjene Američke Države, 28.03.1994. - 31.03.1994
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Anisotropic magnetoresistance, Indium phosphide, Oxygen, Hydrogen, Argon, Polymers, Vertical cavity surface emitting lasers, Plasma applications, Sputter etching, Mirrors
Sažetak
This paper contrasts the various uses of oxygen in methane/hydrogen/argon (O/sub 2/:MHA) RIE, in continuous or cyclical processes, for etching deep structures (>5 /spl mu/m). In particular, we show its application to long wave, InGaAsP/InP mirrors for vertical cavity surface emitting laser structures (VCSELs).
Izvorni jezik
Engleski
