Naslov
Wafer bonding of InP and GaAs: Interface characterization and device applications

Autori
Yang, L. ; Carey, K. ; Ludowise, M. ; Perez, W. ; Mars, D. E. ; Fouquet, J. ; Nauka, K. ; Rosner, S. J. ; Ram, R. J. ; Dudley, J. J. ; Babić, D. I. ; Bowers, J. E.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 6th International Conference on InP and Related Materials paper MP36 / - , 1994

Skup
6th International Conference on InP and Related Materials

Mjesto i datum
Santa Barbara (CA), Sjedinjene Američke Države, 28.03.1994. - 31.03.1994

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Wafer bonding, Indium phosphide, Gallium arsenide, III-V semiconductor materials, Optical materials, Electron beams, Solids, Spectroscopy, Photoluminescence, Optical reflection

Sažetak
Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.

Izvorni jezik
Engleski

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