Pregled bibliografske jedinice broj: 886552
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates // Proceedings of the 6th International Conference on InP and Related Materials paper WA3
Santa Barbara (CA), Sjedinjene Američke Države, 1994. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Autori
Dudley, J. J. ; Babić, D. I. ; Mirin, R. P. ; Yang, L. ; Miller, B. I. ; Hu, E. L. ; Bowers, J. E.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 6th International Conference on InP and Related Materials paper WA3
/ - , 1994
Skup
6th International Conference on InP and Related Materials
Mjesto i datum
Santa Barbara (CA), Sjedinjene Američke Države, 28.03.1994. - 31.03.1994
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Laser modes, Mirrors, Gallium arsenide, Bandwidth, Indium phosphide, Dielectric substrates, Fiber lasers, Etching, Temperature distribution, Reflectivity
Sažetak
We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.
Izvorni jezik
Engleski
