Pregled bibliografske jedinice broj: 886547
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates // Proceedings of the IEEE 51st Device Research Conference post deadline paper IIIB-8
Santa Barbara (CA), Sjedinjene Američke Države, 1993. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Autori
Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the IEEE 51st Device Research Conference post deadline paper IIIB-8
/ - , 1993
Skup
IEEE 51st Device Research Conference
Mjesto i datum
Santa Barbara (CA), Sjedinjene Američke Države, 06.1993
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions
Sažetak
Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K ; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection.
Izvorni jezik
Engleski
