Naslov
Refractive Index of AlGaInAs on InP for Optoelectronic Applications

Autori
Babic, D.I. ; Mondry, M.J. ; Bowers, J.E. ; Coldren, L.A.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the IEEE Lasers and Electro-Optics Society 1991 Annual Meeting paper-OE9.6 / - , 1991

Skup
IEEE Lasers and Electro-Optics Society 1991 Annual Meeting Digest

Mjesto i datum
San Jose (CA), Sjedinjene Američke Države, 1991

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Refractive index, Indium phosphide, Molecular beam epitaxial growth, Optical waveguides, Superlattices, Lattices, Diffraction, Photoluminescence, Optical reflection, Spectroscopy

Sažetak
Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al, Ga, In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al, Ga, In)As films as a function of wavelength. The measured data were fitted to a single- oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.

Izvorni jezik
Engleski

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