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Pregled bibliografske jedinice broj: 886242

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Wada, H.; Babić, Dubravko I.; Crawford, D.L.; Reynolds, T.E.; Dudley, J.J.; Bowers, J.E.; Hu, E.L.; Merz, J.L.; Miller, B.I.; Koren, U.; Young, M.G.
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers // Proceedings of the Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991
San Jose (CA), Sjedinjene Američke Države, 1991. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Autori
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Reynolds, T.E. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991 / - , 1991

Skup
Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991

Mjesto i datum
San Jose (CA), Sjedinjene Američke Države, 1991

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes

Sažetak
Room-temperature pulsed operation of InGaAsP (1.3 um)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room- temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.

Izvorni jezik
Engleski



POVEZANOST RADA

Profili:

Avatar Url Dubravko Babić (autor)

Citiraj ovu publikaciju:

Wada, H.; Babić, Dubravko I.; Crawford, D.L.; Reynolds, T.E.; Dudley, J.J.; Bowers, J.E.; Hu, E.L.; Merz, J.L.; Miller, B.I.; Koren, U.; Young, M.G.
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers // Proceedings of the Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991
San Jose (CA), Sjedinjene Američke Države, 1991. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Wada, H., Babić, D., Crawford, D., Reynolds, T., Dudley, J., Bowers, J., Hu, E., Merz, J., Miller, B., Koren, U. & Young, M. (1991) Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers. U: Proceedings of the Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991.
@article{article, author = {Wada, H. and Babi\'{c}, Dubravko I. and Crawford, D.L. and Reynolds, T.E. and Dudley, J.J. and Bowers, J.E. and Hu, E.L. and Merz, J.L. and Miller, B.I. and Koren, U. and Young, M.G.}, year = {1991}, chapter = {SDL4.6}, keywords = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes}, title = {Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers}, keyword = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes}, publisherplace = {San Jose (CA), Sjedinjene Ameri\v{c}ke Dr\v{z}ave}, chapternumber = {SDL4.6} }
@article{article, author = {Wada, H. and Babi\'{c}, Dubravko I. and Crawford, D.L. and Reynolds, T.E. and Dudley, J.J. and Bowers, J.E. and Hu, E.L. and Merz, J.L. and Miller, B.I. and Koren, U. and Young, M.G.}, year = {1991}, chapter = {SDL4.6}, keywords = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes}, title = {Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers}, keyword = {Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes}, publisherplace = {San Jose (CA), Sjedinjene Ameri\v{c}ke Dr\v{z}ave}, chapternumber = {SDL4.6} }

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